CAJ | 학술논문

在真空环境下利用飞秒激光制备的“黑硅”材料，其形貌与SF6气氛中制备的“黑硅”材料有着很大的区别。为了研究这种真空环境下制备的微构造硅的相关光学特性，通过改变入射脉冲能量研究其峰值变化以及吸收特性，发现当峰值达到一定高度时其对200~2500 nm波段的光波有95%左右的吸收效率，这与SF6气氛中制备的微构造硅的吸收效率不相上下。最后对两种环境下制备的“黑硅”样品进行退火处理，发现真空环境下制备的“黑硅”材料比SF6气氛中制备的“黑硅”样品具有更好的耐退火性。这些结果对于利用真空环境下制备的微构造硅制作红外传感器具有重要意义。
재진공배경하이용비초격광제비적“흑규”재료，기형모여SF6기분중제비적“흑규”재료유착흔대적구별。위료연구저충진공배경하제비적미구조규적상관광학특성，통과개변입사맥충능량연구기봉치변화이급흡수특성，발현당봉치체도일정고도시기대200~2500 nm파단적광파유95%좌우적흡수효솔，저여SF6기분중제비적미구조규적흡수효솔불상상하。최후대량충배경하제비적“흑규”양품진행퇴화처리，발현진공배경하제비적“흑규”재료비SF6기분중제비적“흑규”양품구유경호적내퇴화성。저사결과대우이용진공배경하제비적미구조규제작홍외전감기구유중요의의。
It is found that the black silicon fabricated by femtosecond laser in the vacuum is different from that fabricated in the gas atmosphere of SF6. To study the related optical properties of this micro-structured silicon fabricated in the vacuum, the changes of its peak height and absorptance were studied by changing the energy of laser pulse. It is found that the microstructures fabricated in the vacuum can also reach the absorptance of ~95% in the spectral range of 200-2 500 nm as that fabricated in the gas atmosphere of SF6. Finally, by annealing the black silicon fabricated in two different environments, the black silicon fabricated in the vacuum has better annealing resistance. These results are very significative for the fabrication of infrared sensor.