CAJ | 학술논문

用a介质(n型掺杂GaAs)和b介质(TiO2)组成一含缺陷层的光子晶体。数值计算表明：此光子晶体在3.0~4.5 THz范围内出现了5个透射率为1的缺陷模，这些缺陷模有如下特征：当n型掺杂GaAs的掺杂浓度n由1017/cm3增加到1019/cm3时，缺陷模的中心、半峰全宽度和透射率均保持不变，但若n增至1020/cm3，则缺陷模的透射率开始下降。入射角增加，缺陷模的透射率保持不变，但其中心发生蓝移，移动率为变量，且半峰全宽度变窄。a、b两介质或缺陷层c的几何厚度分别增加时，缺陷模的透射率和半峰全宽度分别保持不变，中心位置红移。这些现象为此类光子晶体实现太赫兹频段的梳状滤波提供了理论指导。
용a개질(n형참잡GaAs)화b개질(TiO2)조성일함결함층적광자정체。수치계산표명：차광자정체재3.0~4.5 THz범위내출현료5개투사솔위1적결함모，저사결함모유여하특정：당n형참잡GaAs적참잡농도n유1017/cm3증가도1019/cm3시，결함모적중심、반봉전관도화투사솔균보지불변，단약n증지1020/cm3，칙결함모적투사솔개시하강。입사각증가，결함모적투사솔보지불변，단기중심발생람이，이동솔위변량，차반봉전관도변착。a、b량개질혹결함층c적궤하후도분별증가시，결함모적투사솔화반봉전관도분별보지불변，중심위치홍이。저사현상위차류광자정체실현태혁자빈단적소상려파제공료이론지도。
A photonic crystal containing defect layer was composed of a medium (n- type doped GaAs) and b medium (TiO2). Numerical calculations indicate that there are 5 defect mode of 1 transmittance within 3.0- 4.5 THz for the photonic crystal. These defect mode have following characteristics: when the doping concentration n of GaAs increases within 1017/cm3 to 1019/cm3, the center, the full width at half maximum (FWHM) and the transmittance of the defect mode remain unchanged, However, if n increased to 1020/cm3, the transmittance of the defect mode began to decline. With increasing angle of incidence, the transmittance of the defect mode remain unchanged, but their center blue-shift, the mobile rate are variable, and FWHM narrows. The central position of the defect mode occurs red shift with increasing the thickness of the media layer a, b or the defect layer c respectively, while both the transmittance and FWHM remain constant. These phenomena provide theoretical guidance for this type of photonic crystal to realize the comb filtering in terahertz frequency range.