CAJ | 학술논문

首先介绍了CMOS图像传感器工作的基本原理。以自研的超连续谱光源为干扰源搭建了实验装置，对CMOS器件在强光下的受干扰现象进行了实验研究。获得了不同功率密度水平下CMOS器件输出的光斑饱和图像。以入射到CMOS 器件靶面的功率密度3.14×10-3 W/cm2为例，对得到的图像数据进行了分析，得到了干扰效果图和像元灰度表，并对产生的原因作出了分析。
수선개소료CMOS도상전감기공작적기본원리。이자연적초련속보광원위간우원탑건료실험장치，대CMOS기건재강광하적수간우현상진행료실험연구。획득료불동공솔밀도수평하CMOS기건수출적광반포화도상。이입사도CMOS 기건파면적공솔밀도3.14×10-3 W/cm2위례，대득도적도상수거진행료분석，득도료간우효과도화상원회도표，병대산생적원인작출료분석。
Firstly the principle of CMOS photodetectors is introduced,and some basic theories of supercontinuum are discussed. The experiment equipment is built with self-developed supercontiuum light source as interference source.The output power is about 3W and spectrum range is 600~1700 nm. Based on the supercontinuum light source,the high power interference experiment is carried out with CMOS detector as the imaging component. The saturation ima-ges are collected from CMOS under different laser power densities. The image data is analyzed and interference effect pictures are drawn. When the power density in the CMOS detector is 3.14 ×10 -3 W/cm2 ,gray chart of single picture elements is achieved,and the result is discussed.