CAJ | 학술논문

采用离子束溅射技术,通过改变诱导量子点形成的C层生长温度,在n型Si(100)衬底上自组装生长了一系列Ge量子点。利用 AFM和 Raman光谱对样品的表面形貌和结构进行了表征。实验结果表明,当C层的温度从600℃升高到700℃时,Ge 量子点的密度逐渐降低,且结晶性变差；此时,量子点中的 Si 组分升高。当C层的生长温度从700℃升高到800℃过程中,Ge量子点的密度逐渐增大,结晶性也有所改善；此时,量子点中的Si含量降低。
채용리자속천사기술,통과개변유도양자점형성적C층생장온도,재n형Si(100)츤저상자조장생장료일계렬Ge양자점。이용 AFM화 Raman광보대양품적표면형모화결구진행료표정。실험결과표명,당C층적온도종600℃승고도700℃시,Ge 양자점적밀도축점강저,차결정성변차；차시,양자점중적 Si 조분승고。당C층적생장온도종700℃승고도800℃과정중,Ge양자점적밀도축점증대,결정성야유소개선；차시,양자점중적Si함량강저。
A series of Ge quantum dot samples at different C-induced layer temperature were grown on n-Si(100) substrates by ion beam sputtering.Their morphology and structure were characterizated by AFM and Raman spectra.Results showed that when the growth temperature of C layer increased from 600 to 700 ℃,the density of the quantum dots decreased to a minimum and the crystalline became worse;the Si composition increased in quantum dots at the same time.When the growth temperature of C layer increased from 700 to 800 ℃,the den-sity of the quantum dots increases to a maximum and the crystalline turned better;while the composition of Si in Ge quantum dots reduced.