CAJ | 학술논문

利用对微结构变化非常灵敏的相干声子光谱技术研究了非晶N：Ge S b薄膜的光致相变特征。发现当激光辐照能流达到某个阈值时，出现了一个新的声子模，表明相变的发生。同时，退火晶化的N：Ge S b薄膜也出现此新的声子模，表明激光照射的确导致了薄膜的晶化。相干光学声子谱的抽运能量密度依赖实验结果表明光致晶化的N：Ge S b薄膜的相干光学声子的寿命和频率均随抽运能量密度增加而减小，与晶体中的依赖关系一致。结果表明N：Ge S b薄膜的光致晶化质量较好，具有相变光存储应用潜力。
이용대미결구변화비상령민적상간성자광보기술연구료비정N：Ge S b박막적광치상변특정。발현당격광복조능류체도모개역치시，출현료일개신적성자모，표명상변적발생。동시，퇴화정화적N：Ge S b박막야출현차신적성자모，표명격광조사적학도치료박막적정화。상간광학성자보적추운능량밀도의뢰실험결과표명광치정화적N：Ge S b박막적상간광학성자적수명화빈솔균수추운능량밀도증가이감소，여정체중적의뢰관계일치。결과표명N：Ge S b박막적광치정화질량교호，구유상변광존저응용잠력。
Laser irradiation induced phase change of a new amorphous N:GeSb film is studied by coher-ent phonon spectroscopy,which is very sensitive to its microstructure.It is found that a new coherent op-tical phonon (COP)occurs as laser irradiation fluence reaches some threshold,implying laser-induced phase change emerged.Meanwhile,this new phonon also occurs in annealed crystallized N:GeSb film, which proves that the laser irradiation does lead to the crystallization of the N:GeSb film.Pump fluence dependence of COP dynamics of laser-induced crystallized N:GeSb film shows that the frequency and life time of COP decrease as pump energy density increases,which is in accordance with the annealed crys-tallized N:GeSb film.So it implies the high crystalline quality of the laser-induced phase-change film and the potential application of N:GeSb films in optical phase change memory.