CAJ | 학술논문

垂直外腔面发射半导体激光器在高功率运转的同时可以保持良好的光束质量，近年来一直成为研究的热点。本文介绍了垂直外腔面发射半导体激光器的结构及运行原理。由于热管理是其高功率运行的主要限制因素之一，分析了垂直外腔面发射半导体激光器的热管理方法。使用反向生长的外延片通过化学湿法腐蚀去掉砷化镓衬底，得到了约6μm左右的外延片，最后利用808nm的泵浦光进行抽运获得了200mW的连续激光输出。
수직외강면발사반도체격광기재고공솔운전적동시가이보지량호적광속질량，근년래일직성위연구적열점。본문개소료수직외강면발사반도체격광기적결구급운행원리。유우열관리시기고공솔운행적주요한제인소지일，분석료수직외강면발사반도체격광기적열관리방법。사용반향생장적외연편통과화학습법부식거도신화가츤저，득도료약6μm좌우적외연편，최후이용808nm적빙포광진행추운획득료200mW적련속격광수출。
The technology that, while maintaining high power of operation, the Vertical-Extemal-Cavity Surface-Emitting semi-conductor laser (VECSEL) has ability to produce high quality of laser beam, has become popularly-concerned research. The article has demonstrated the structure and operation principle of VECSEL. Further, since the thermoregulation is the main limit to high pow-er operation of VECSEL, the article has analyzed the method of it. The method is to use wet-etching process to remove the GaAs sub-strate of reversed stretching epitaxial wafers to get a new 6μm wafer.Then, by a 808nm pump light, the VECSEL will produce a 200mW continuous laser beam.