光电工程
光電工程
광전공정
OPTO-ELECTRONIC ENGINEERING
2014年
3期
7-12
,共6页
付杰%王晓华%李金华%方铉%魏志鹏
付傑%王曉華%李金華%方鉉%魏誌鵬
부걸%왕효화%리금화%방현%위지붕
大高宽比%X射线光刻%电子束光刻%全水电镀
大高寬比%X射線光刻%電子束光刻%全水電鍍
대고관비%X사선광각%전자속광각%전수전도
high aspect-ratio%X-ray lithography%e-beam lithography%water electroplating
针对惯性约束性聚变(ICF)实验中高分辨靶源辐射成像的需要,对结合电子束光刻和X射线光刻制作大高宽比菲涅尔波带片的制作工艺进行了研究。首先采用带有自支撑薄膜的衬底进行电子束光刻和微电镀技术来制作X射线光刻掩膜,以此来降低电子束光刻过程中的背散射,然后采用多次X射线曝光和全水电镀的方法来增强大高宽比图形的抗倒性,从而完成了大高宽比波带片结构的制作。对所制作的自支撑波带片最外环宽度为350 nm,厚度为3.5μm,高宽比达到10,侧壁陡直且具有优良的结构质量,可用于10 keV~30 keV波段的硬X射线成像。
針對慣性約束性聚變(ICF)實驗中高分辨靶源輻射成像的需要,對結閤電子束光刻和X射線光刻製作大高寬比菲涅爾波帶片的製作工藝進行瞭研究。首先採用帶有自支撐薄膜的襯底進行電子束光刻和微電鍍技術來製作X射線光刻掩膜,以此來降低電子束光刻過程中的揹散射,然後採用多次X射線曝光和全水電鍍的方法來增彊大高寬比圖形的抗倒性,從而完成瞭大高寬比波帶片結構的製作。對所製作的自支撐波帶片最外環寬度為350 nm,厚度為3.5μm,高寬比達到10,側壁陡直且具有優良的結構質量,可用于10 keV~30 keV波段的硬X射線成像。
침대관성약속성취변(ICF)실험중고분변파원복사성상적수요,대결합전자속광각화X사선광각제작대고관비비열이파대편적제작공예진행료연구。수선채용대유자지탱박막적츤저진행전자속광각화미전도기술래제작X사선광각엄막,이차래강저전자속광각과정중적배산사,연후채용다차X사선폭광화전수전도적방법래증강대고관비도형적항도성,종이완성료대고관비파대편결구적제작。대소제작적자지탱파대편최외배관도위350 nm,후도위3.5μm,고관비체도10,측벽두직차구유우량적결구질량,가용우10 keV~30 keV파단적경X사선성상。
The manufacture of high aspect-ratio hard X-ray zone plates for Inertial Confinement Fusion (ICF) experiment by using electron beam lithography and X-ray lithography was demonstrated. The X-ray lithography mask was first fabricated on hollow polyimide film to reduce the back-scattering during electron-beam lithography process. Then multiple X-ray exposures and full water electroplating method were used to increase the lodging resistance of the resist pattern. The zone plates with outermost zone width of 350 nm, profile thickness of 3.5μm, and aspect ratio of 10, were successfully fabricated by using the combined technology. The structure of zone plates is steep and has excellent graphics quality,and can be used for 10 to 30 keV X-ray imaging system.