电子与信息学报
電子與信息學報
전자여신식학보
JOURNAL OF ELECTRONICS & INFORMATION TECHNOLOGY
2014年
3期
754-757
,共4页
彭真%阴生毅%郑强%王欣欣%王宇%李阳
彭真%陰生毅%鄭彊%王訢訢%王宇%李暘
팽진%음생의%정강%왕흔흔%왕우%리양
钪型阴极%半导体模型%脉冲激光沉积%非正常肖特基效应
鈧型陰極%半導體模型%脈遲激光沉積%非正常肖特基效應
항형음겁%반도체모형%맥충격광침적%비정상초특기효응
Scandate cathode%Semiconductor model%Pulse Laser Deposition (PLD)%Abnormal Schottky effect
为提高阴极的发射性能以满足新型器件的需求,该文利用脉冲激光沉积技术制备了一种覆W+BaO-Sc-SrO薄膜的浸渍扩散阴极。实验测得了该阴极在不同温度下的伏安特性曲线,并探讨了发射机制。结果表明,在1100工作温度下,该阴极的零场发射电流密度达到305.5 A/cm22O3?C;阴极表面形成的Ba-Sc-Sr-O活性层是阴极获得高发射性能的主要原因。文章还利用半导体模型解释了该阴极的非正常肖特基效应。
為提高陰極的髮射性能以滿足新型器件的需求,該文利用脈遲激光沉積技術製備瞭一種覆W+BaO-Sc-SrO薄膜的浸漬擴散陰極。實驗測得瞭該陰極在不同溫度下的伏安特性麯線,併探討瞭髮射機製。結果錶明,在1100工作溫度下,該陰極的零場髮射電流密度達到305.5 A/cm22O3?C;陰極錶麵形成的Ba-Sc-Sr-O活性層是陰極穫得高髮射性能的主要原因。文章還利用半導體模型解釋瞭該陰極的非正常肖特基效應。
위제고음겁적발사성능이만족신형기건적수구,해문이용맥충격광침적기술제비료일충복W+BaO-Sc-SrO박막적침지확산음겁。실험측득료해음겁재불동온도하적복안특성곡선,병탐토료발사궤제。결과표명,재1100공작온도하,해음겁적령장발사전류밀도체도305.5 A/cm22O3?C;음겁표면형성적Ba-Sc-Sr-O활성층시음겁획득고발사성능적주요원인。문장환이용반도체모형해석료해음겁적비정상초특기효응。
In order to improve the emission performance of cathodes to meet the demands of new type devices, this paper develops a new-type scandate cathode coated with W+BaO-Sc 2O3-SrO film prepared by Pulse Laser Deposition (PLD) technology. The experiment obtains emission current characteristics measured as a function of voltage and temperature and analyzes the emission mechanism. The test results indicate that at 1100 the current density of the new cathode reaches 305.5 A/cm2?C;and the layer of Ba-Sc-Sr-O is the key to this excellent performance. The abnormal Schottky effect that the cathode appears is also investigated by using semiconductor model.