CAJ | 학술논문

针对无线通信飞速发展对高功率和高效率功率放大器的需求,提出了一种Cascode结构的2.4 GHz E类高功率放大器。它采用单端接地和单级放大的电路形式。基于国内新研制的0.18μm SiGe BiCMOS工艺,实现了片内全集成,包括输入与输出匹配网络,具有结构简单、高集成度等特点。同时,考虑了器件的击穿电压,高电流下的电迁移和高功率的稳定性等问题,并进行了优化设计。结果表明,在10 V电源电压时,放大器的输出功率高达30 dBm,效率PAE为39.69%,最大功率增益达14 dB。
침대무선통신비속발전대고공솔화고효솔공솔방대기적수구,제출료일충Cascode결구적2.4 GHz E류고공솔방대기。타채용단단접지화단급방대적전로형식。기우국내신연제적0.18μm SiGe BiCMOS공예,실현료편내전집성,포괄수입여수출필배망락,구유결구간단、고집성도등특점。동시,고필료기건적격천전압,고전류하적전천이화고공솔적은정성등문제,병진행료우화설계。결과표명,재10 V전원전압시,방대기적수출공솔고체30 dBm,효솔PAE위39.69%,최대공솔증익체14 dB。
For the needs of high power and high efficiency power amplifier in the rapid development of wireless com-munication,a 2. 4GHz class E high power amplifier was designed,which was based on Cascode configuration. It employed single-ended and one stage amplification circuit format. All the devices including input and output matching networks were integrated on chip which was based on a 0 . 18 μm SiGe BiCMOS technology newly researched in a domestic foundry. It had advantages of simple structures and high integration. At the same time,it also considered devices’ breakdown voltage,electro migration with high current and stability of high power and so on problems to design optimization. Results showed that the power amplifier’s output power could reach up to 30 dBm,PAE to 39. 69% and maximum power gain was 14 dB of power supply 10 V.