CAJ | 학술논문

提出了一种新型绝缘体上硅横向绝缘栅双极型晶体管（SOI-LIGBT），该晶体管在沟道下方的 P 型体区旁增加了一个特殊的低掺杂 P 型阱区，在不增加额外工艺的基础上减小了器件线性区电流的退化．分析了低掺杂 P 阱的宽度和深度对 SOI-LIGBT 器件热载流子可靠性的影响．通过增加低掺杂 P 型阱区的宽度，可以减小器件的纵向电场峰值和碰撞电离峰值，从而优化器件的热载流子效应．另外，增加低掺杂 P 型阱区的深度，也会减小器件内部的碰撞电离率，从而减弱器件的热载流子退化．结合低掺杂 P 型阱区的作用和工艺窗口大小的影响，确定低掺杂 P 型阱区的宽度和深度都为2μm．
제출료일충신형절연체상규횡향절연책쌍겁형정체관（SOI-LIGBT），해정체관재구도하방적 P 형체구방증가료일개특수적저참잡 P 형정구，재불증가액외공예적기출상감소료기건선성구전류적퇴화．분석료저참잡 P 정적관도화심도대 SOI-LIGBT 기건열재류자가고성적영향．통과증가저참잡 P 형정구적관도，가이감소기건적종향전장봉치화팽당전리봉치，종이우화기건적열재류자효응．령외，증가저참잡 P 형정구적심도，야회감소기건내부적팽당전리솔，종이감약기건적열재류자퇴화．결합저참잡 P 형정구적작용화공예창구대소적영향，학정저참잡 P 형정구적관도화심도도위2μm．
A novel lateral insulated gate bipolar transistor on a silicon-on-insulator substrate SOI-LIGBT with a special low-doped P-well structure is proposed.The P-well structure is added to attach the P-body under the channel so as to reduce the linear anode current degradation without additional process.The influence of the length and depth of the P-well on the hot-carrier HC reliability of the SOI-LIGBT is studied.With the increase in the length of the P-well the perpendicular electric field peak and the impact ionization peak diminish resulting in the reduction of the hot-carrier degradation. In addition the impact ionization will be weakened with the increase in the depth of the P-well which also makes the hot-carrier degradation decrease.Considering the effect of the low-doped P-well and the process windows the length and depth of the P-well are both chosen as 2 μm.