西安电子科技大学学报（自然科学版）
西安電子科技大學學報（自然科學版）
서안전자과기대학학보（자연과학판）
JOURNAL OF XIDIAN UNIVERSITY(NATURAL SCIENCE)
2014年
2期
125-129
,共5页
杨小峰%史江义%马佩军%郝跃
楊小峰%史江義%馬珮軍%郝躍
양소봉%사강의%마패군%학약
高电子迁移率晶体管%数字移相器%高低通%相位精度%级联散射抑制
高電子遷移率晶體管%數字移相器%高低通%相位精度%級聯散射抑製
고전자천이솔정체관%수자이상기%고저통%상위정도%급련산사억제
high electron mobility transistor%digital phase shifters%high-pass/low-pass network%phase precision%series scatter restrain
采用0.25μm GaAs高电子迁移率晶体管(HEMT)工艺设计了一款六位 S波段数字移相器.移相器采用高低通和全通网络结构,运用了提高相位精度和抑制级联散射的方法.移相器在0°~360°相位范围内以5.625°步进,在2.1~2.7 GHz频率范围内,最小相位均方根误差仅为1.13°.频带范围内插入损耗小于6.3 dB,幅度均衡小于0.4 dB,输入输出反射系数小于-10 dB.
採用0.25μm GaAs高電子遷移率晶體管(HEMT)工藝設計瞭一款六位 S波段數字移相器.移相器採用高低通和全通網絡結構,運用瞭提高相位精度和抑製級聯散射的方法.移相器在0°~360°相位範圍內以5.625°步進,在2.1~2.7 GHz頻率範圍內,最小相位均方根誤差僅為1.13°.頻帶範圍內插入損耗小于6.3 dB,幅度均衡小于0.4 dB,輸入輸齣反射繫數小于-10 dB.
채용0.25μm GaAs고전자천이솔정체관(HEMT)공예설계료일관육위 S파단수자이상기.이상기채용고저통화전통망락결구,운용료제고상위정도화억제급련산사적방법.이상기재0°~360°상위범위내이5.625°보진,재2.1~2.7 GHz빈솔범위내,최소상위균방근오차부위1.13°.빈대범위내삽입손모소우6.3 dB,폭도균형소우0.4 dB,수입수출반사계수소우-10 dB.
A digital 6-bit phase shifter for S-band based 0.25μm GaAs HEMT technology is presented. The high-pass/low-pass network and all-pass network are utilized synthetically for the topology of the phase shifter,with both the phase precision improvement technique and the series scatter restrain technique adopted.The relative phase shift varies from 0 to 360 at the step of 5.625°.Over the design band of 2.1~2.7 GHz,the minimum rms phase error is 1.13°,and a low insertion loss is less than 6.3 dB,of which the amplitude fluctuation is less than 0.4 dB and the input and output scatter parameter is less than -10 dB under all conditions.
