CAJ | 학술논문

应用胡克定律,建立了单、双轴张应力作用下应变锗在任意面内沿<001>、<110>和<111>方向的应变张量模型.根据线性形变势能理论,计算了单轴应力沿<001>、<110>和<111>方向作用下以及双轴应力在不同晶面内的应变锗导带各个能谷的谷底能级的变化情况.计算结果显示,在<001>方向的单轴应力作用下,Δ能谷带边能级分裂,且在压应力为1.8 GPa时,Δ能谷的谷底能级变为最低能级.在<110>方向的单轴应力作用下,Δ能谷和 L 能谷带边能级分裂.在<111>方向的单轴应力作用下,L 能谷带边能级分裂.并且随着应力的增加,所有能谷最低能级下降.而在双轴张应力作用下,当面内应变张量达到1.8%时,(001)面应变锗的Γ能谷最低,能级比Δ能谷最低能级还要低.这表明,应变锗由间接带隙半导体变为直接带隙半导体.所得到的结果可为应变锗半导体器件和光电器件的设计提供参考.
응용호극정률,건립료단、쌍축장응력작용하응변타재임의면내연<001>、<110>화<111>방향적응변장량모형.근거선성형변세능이론,계산료단축응력연<001>、<110>화<111>방향작용하이급쌍축응력재불동정면내적응변타도대각개능곡적곡저능급적변화정황.계산결과현시,재<001>방향적단축응력작용하,Δ능곡대변능급분렬,차재압응력위1.8 GPa시,Δ능곡적곡저능급변위최저능급.재<110>방향적단축응력작용하,Δ능곡화 L 능곡대변능급분렬.재<111>방향적단축응력작용하,L 능곡대변능급분렬.병차수착응력적증가,소유능곡최저능급하강.이재쌍축장응력작용하,당면내응변장량체도1.8%시,(001)면응변타적Γ능곡최저,능급비Δ능곡최저능급환요저.저표명,응변타유간접대극반도체변위직접대극반도체.소득도적결과가위응변타반도체기건화광전기건적설계제공삼고.
This paper estabilishes the strained-tensor model by Hooke’s law and calculates the energy-level shifts of L,Δ and Γ valleys by the deformation potential theory.By enforcing the uniaxial stress in germanium along <001> direction,the edge band of theΔvalley is split with the bottom energy-level being the lowest one among all valleys when the compressive stress is 1.8 GPa.When the strained direction is<1 10>,the edge bands of L andΔvalleys are split.The L valley is split as the strained direction is <1 1 1>. When the biaxial tensile-strain is applied,we obtain the conclusion that the strained Ge can become the direct band gap from the indirect band gap as a tensile in-plane strain is 1.8%.