CAJ | 학술논문

基于标准0.13μm工艺使用Sentaurus TCAD软件采用3D器件/电路混合模拟方式仿真了buffer单元的单粒子瞬态脉冲。通过改变重离子的入射条件，得到了一系列单粒子瞬态电流脉冲( SET)。分析了LET值、入射位置、电压偏置等重要因素对SET峰值和脉宽的影响。研究发现，混合模式仿真中的上拉补偿管将导致实际电路中SET脉冲的形状发生明显的变化。
기우표준0.13μm공예사용Sentaurus TCAD연건채용3D기건/전로혼합모의방식방진료buffer단원적단입자순태맥충。통과개변중리자적입사조건，득도료일계렬단입자순태전류맥충( SET)。분석료LET치、입사위치、전압편치등중요인소대SET봉치화맥관적영향。연구발현，혼합모식방진중적상랍보상관장도치실제전로중SET맥충적형상발생명현적변화。
Based on standard 0. 13 μm technology mixed-mode simulations of heavy ion is introduced. The Single Event Transient( SET) on buffer cells is simulated by using device and circuit mixed mode of heavy ion. By changing the simulation conditions, a series of SET current pulse is obtained. On the analysis of the influence of several important factors,such as the linear energy transfer( LET) ,the incidence location and voltage bias on the SET pulse width and magnitude are executed. The results indicate the pull-up compensating MOSFETin practical circuit obviously to lead to a different SET pulse.