CAJ | 학술논문

介绍了通过测试及ADS软件去嵌入得到RF-LDMOS管芯阻抗的方法，并通过测试结果验证其准确性。介绍了两种常用的内匹配电路形式及其特点，并采用其中一种通过ADS和HFSS两款仿真软件实现一款自主研发的45 mm 栅宽RF-LDMOS内匹配电路，说明了内匹配电路设计的一般步骤以及MOS电容和键合线HFSS仿真实现。测试结果表明，该匹配电路实现了预期功能，在工作频带内得到了较为稳定的输入/输出阻抗，同时1 dB压缩点增益达到16.5 dB，功率达到48.9 dBm，器件每毫米栅宽功率密度达到1.7 W/mm。
개소료통과측시급ADS연건거감입득도RF-LDMOS관심조항적방법，병통과측시결과험증기준학성。개소료량충상용적내필배전로형식급기특점，병채용기중일충통과ADS화HFSS량관방진연건실현일관자주연발적45 mm 책관RF-LDMOS내필배전로，설명료내필배전로설계적일반보취이급MOS전용화건합선HFSS방진실현。측시결과표명，해필배전로실현료예기공능，재공작빈대내득도료교위은정적수입/수출조항，동시1 dB압축점증익체도16.5 dB，공솔체도48.9 dBm，기건매호미책관공솔밀도체도1.7 W/mm。
A de-embedding method to get the on-die input and output impedance of RF-LDMOS by testing and software ADS is introduced in this paper. Its accuracy was validated by testing. Two kinds of common internal-matching circuits and their characteristics are introduced. An independently-developed RF-LDMOS internal-matching circuit with 45 mm grid width was achieved by means of ADS and HFSS. The common procedures of internal-matching circuit design,and the realization of MOS-capacitor and the bonding-wire simulation with HFSS are described. The testing result proves that the matching circuit can realize the intended functions. The stable input/output impedance was obtained inside the working band. The gain at 1 dB compression point reachs 16.5 dB. The power at 1 dB compression point reachs 48.9 dBm. The power density of grid width per millimeter reachs 1.7 W/mm.