核电子学与探测技术
覈電子學與探測技術
핵전자학여탐측기술
NUCLEAR ELECTRONICS & DETECTION TECHNOLOGY
2014年
3期
369-374
,共6页
杜川华%许献国%赵海霖%赵洪超
杜川華%許獻國%趙海霖%趙洪超
두천화%허헌국%조해림%조홍초
可编程器件%瞬时电离辐射效应%32位微控制器%反熔丝FPGA
可編程器件%瞬時電離輻射效應%32位微控製器%反鎔絲FPGA
가편정기건%순시전리복사효응%32위미공제기%반용사FPGA
programmed device%transient ionizing radiation effects%32 bit Microcontroller%anti-fuse FPGA
概述了国内外瞬时电离辐射效应的研究历程。针对空间电子学系统常用的两种类型可编程器件(32位微控制器和反熔丝FPGA),分别研制了辐照试验长线动态测试系统,在“强光一号”脉冲加速器上开展了γ瞬时电离辐照试验。试验数据表明:32位微控制器的瞬时电离辐射效应表现为复位重启和闭锁,闭锁阈值为6×107 Gy/Si.s,反熔丝FPGA的瞬时电离辐射效应表现为瞬时扰动和复位重启,二者的工作电流都随着剂量率的增加而升高。分析了两种可编程器件的瞬时电离辐射损伤机理,提出了一种“瞬时回避+数据备份与恢复”的抗瞬时电离辐射的电路设计加固方法。
概述瞭國內外瞬時電離輻射效應的研究歷程。針對空間電子學繫統常用的兩種類型可編程器件(32位微控製器和反鎔絲FPGA),分彆研製瞭輻照試驗長線動態測試繫統,在“彊光一號”脈遲加速器上開展瞭γ瞬時電離輻照試驗。試驗數據錶明:32位微控製器的瞬時電離輻射效應錶現為複位重啟和閉鎖,閉鎖閾值為6×107 Gy/Si.s,反鎔絲FPGA的瞬時電離輻射效應錶現為瞬時擾動和複位重啟,二者的工作電流都隨著劑量率的增加而升高。分析瞭兩種可編程器件的瞬時電離輻射損傷機理,提齣瞭一種“瞬時迴避+數據備份與恢複”的抗瞬時電離輻射的電路設計加固方法。
개술료국내외순시전리복사효응적연구역정。침대공간전자학계통상용적량충류형가편정기건(32위미공제기화반용사FPGA),분별연제료복조시험장선동태측시계통,재“강광일호”맥충가속기상개전료γ순시전리복조시험。시험수거표명:32위미공제기적순시전리복사효응표현위복위중계화폐쇄,폐쇄역치위6×107 Gy/Si.s,반용사FPGA적순시전리복사효응표현위순시우동화복위중계,이자적공작전류도수착제량솔적증가이승고。분석료량충가편정기건적순시전리복사손상궤리,제출료일충“순시회피+수거비빈여회복”적항순시전리복사적전로설계가고방법。
A review and summary of research and development in the investigation of transient ionizing radiation effects in devices and circuits is presented .The transient ionizing radiation effects in two type of programmed devices , namely 32 bit Microcontroller and anti -fuse FPGA, were studied .The experimental test data indicate:The transient ionizing radiation effects of 32 bit Microcontroller manifested self -motion restart and Latchup , the Latchup threshold was 5 107 Gy/Si.s.The transient ionizing radiation effects of FPGA was mainly reset , not Latchup .The relationship of circuit effects to physical mechanisms was analyzed .A new method of hardness , instantly blocking and data reserving and recovery , in circuits design was put forward .