地震学报
地震學報
지진학보
ACTA SEISMOLOGICA SINICA
2014年
4期
678-685
,共8页
深埋装置系统%地电阻率%影响系数%边界积分方程
深埋裝置繫統%地電阻率%影響繫數%邊界積分方程
심매장치계통%지전조솔%영향계수%변계적분방정
deeply-buried configuration%geoelectrical resistivity%influence coef-ficient%boundary integral equation
讨论了地电阻率观测装置系统深埋条件下的影响系数特征。采用这类装置的目的在于减小甚至消除来自表层产生的干扰,以提取深部可能的地震信息。采用水平层状介质模型,应用边界积分方程法计算了不同装置埋深、不同装置参数下的影响系数及其与结构参数间的关系。结果表明,不同地层影响系数的大小与电阻率结构、电极埋深、供电极距有密切且复杂的关系。这表明为了有效地压制表层干扰并观测到底层变化,首先需要精细地探查测区电性结构,然后在此基础上,通过理论分析确认装置埋深及选定装置参数。
討論瞭地電阻率觀測裝置繫統深埋條件下的影響繫數特徵。採用這類裝置的目的在于減小甚至消除來自錶層產生的榦擾,以提取深部可能的地震信息。採用水平層狀介質模型,應用邊界積分方程法計算瞭不同裝置埋深、不同裝置參數下的影響繫數及其與結構參數間的關繫。結果錶明,不同地層影響繫數的大小與電阻率結構、電極埋深、供電極距有密切且複雜的關繫。這錶明為瞭有效地壓製錶層榦擾併觀測到底層變化,首先需要精細地探查測區電性結構,然後在此基礎上,通過理論分析確認裝置埋深及選定裝置參數。
토론료지전조솔관측장치계통심매조건하적영향계수특정。채용저류장치적목적재우감소심지소제래자표층산생적간우,이제취심부가능적지진신식。채용수평층상개질모형,응용변계적분방정법계산료불동장치매심、불동장치삼수하적영향계수급기여결구삼수간적관계。결과표명,불동지층영향계수적대소여전조솔결구、전겁매심、공전겁거유밀절차복잡적관계。저표명위료유효지압제표층간우병관측도저층변화,수선수요정세지탐사측구전성결구,연후재차기출상,통과이론분석학인장치매심급선정장치삼수。
This paper deals with the characteristics of the influence coefficient in the cases of array deeply buried for geoelectrical resisitivity observations,which has been developed in recent years and aimed at decreasing or even eliminating the interference from the top layer and exacting the possible earthquake-related information from depth.The horizontal layered model has been taken into con-sideration in the study and the algorithm of the boundary integral equation has been adopted for calculating the influence coefficient,when the configuration of the array is located in the different depths under the ground surface.The calcu-lations demonstrate the features that influence coefficient has been closely con-trolled by the structure parameters of the model,the depth of the buried array and the separation of the array.The results in this paper strongly suggested that one must pay great attention to the following steps in the studies of the deeply-buried array:the first,exploring finely the structure parameters of true resistivity in the observed media,and the second,confirming the depth for the array having been located and the configuration parameters corresponding to the model structure.