世界科学技术-中医药现代化
世界科學技術-中醫藥現代化
세계과학기술-중의약현대화
WORLD SCIENCE AND TECHNOLOGY-MODERNIZATION OF TRADITIONAL CHINESE MEDICINE
2014年
6期
1287-1293
,共7页
半导体激光%急性佐剂性关节炎%生物效应%累积效应%抛物线特征
半導體激光%急性佐劑性關節炎%生物效應%纍積效應%拋物線特徵
반도체격광%급성좌제성관절염%생물효응%루적효응%포물선특정
Semiconductor laser%acute adjuvant arthritis%biological effect%cumulative effect%parabolic characteristic
目的：本实验主要研究650 nm半导体激光不同能量密度照射足三里穴对急性佐剂性关节炎的治疗差异，研究激光照射的生物效应及其作用。方法：健康雄性SD大鼠60只，随机分为正常组对照组、模型组、低能量密度组（61.89 J/cm2）、高能量密度组（247.57 J/cm2），将弗式完全佐剂（FCA）注入大鼠右后肢足跖皮内，建立佐剂性关节炎模型（AA），治疗组采用650 nm半导体激光照射，分别用61.89 J/cm2、247.57 J/cm2两种能量密度照射大鼠足三里穴，观测各组大鼠造模后，第1、3、5次治疗后关节肿胀度、痛阈、肿瘤坏死因子-α（TNF-α）、白介素-1β（IL-1β）水平的变化。结果：与正常组比较，模型组关节肿胀度、痛阈、TNF-α、IL-1β明显升高（P<0.05），完成5次治疗后低能量和高能量密度的半导体激光对于急性炎症均有效果，高能量密度组治疗效果优于低能量密度组（P<0.05）。结论：61.89 J/cm2和247.57 J/cm2能量密度半导体激光照射足三里穴可以缓解急性AA带来的炎症疼痛、肿胀，降低TNF-α、IL-1β浓度水平。半导体激光照射具有刺激或抑制、累积作用后及抛物线特征。低能量密度组获得最佳疗效位于第3~5次治疗之间。
目的：本實驗主要研究650 nm半導體激光不同能量密度照射足三裏穴對急性佐劑性關節炎的治療差異，研究激光照射的生物效應及其作用。方法：健康雄性SD大鼠60隻，隨機分為正常組對照組、模型組、低能量密度組（61.89 J/cm2）、高能量密度組（247.57 J/cm2），將弗式完全佐劑（FCA）註入大鼠右後肢足蹠皮內，建立佐劑性關節炎模型（AA），治療組採用650 nm半導體激光照射，分彆用61.89 J/cm2、247.57 J/cm2兩種能量密度照射大鼠足三裏穴，觀測各組大鼠造模後，第1、3、5次治療後關節腫脹度、痛閾、腫瘤壞死因子-α（TNF-α）、白介素-1β（IL-1β）水平的變化。結果：與正常組比較，模型組關節腫脹度、痛閾、TNF-α、IL-1β明顯升高（P<0.05），完成5次治療後低能量和高能量密度的半導體激光對于急性炎癥均有效果，高能量密度組治療效果優于低能量密度組（P<0.05）。結論：61.89 J/cm2和247.57 J/cm2能量密度半導體激光照射足三裏穴可以緩解急性AA帶來的炎癥疼痛、腫脹，降低TNF-α、IL-1β濃度水平。半導體激光照射具有刺激或抑製、纍積作用後及拋物線特徵。低能量密度組穫得最佳療效位于第3~5次治療之間。
목적：본실험주요연구650 nm반도체격광불동능량밀도조사족삼리혈대급성좌제성관절염적치료차이，연구격광조사적생물효응급기작용。방법：건강웅성SD대서60지，수궤분위정상조대조조、모형조、저능량밀도조（61.89 J/cm2）、고능량밀도조（247.57 J/cm2），장불식완전좌제（FCA）주입대서우후지족척피내，건립좌제성관절염모형（AA），치료조채용650 nm반도체격광조사，분별용61.89 J/cm2、247.57 J/cm2량충능량밀도조사대서족삼리혈，관측각조대서조모후，제1、3、5차치료후관절종창도、통역、종류배사인자-α（TNF-α）、백개소-1β（IL-1β）수평적변화。결과：여정상조비교，모형조관절종창도、통역、TNF-α、IL-1β명현승고（P<0.05），완성5차치료후저능량화고능량밀도적반도체격광대우급성염증균유효과，고능량밀도조치료효과우우저능량밀도조（P<0.05）。결론：61.89 J/cm2화247.57 J/cm2능량밀도반도체격광조사족삼리혈가이완해급성AA대래적염증동통、종창，강저TNF-α、IL-1β농도수평。반도체격광조사구유자격혹억제、루적작용후급포물선특정。저능량밀도조획득최가료효위우제3~5차치료지간。
This study was aimed to compare the difference of treatment on acute adjuvant arthritis (AA) by using dif-ferent energy densities withirradiation on ST36-Zusanli under the fixed wavelength (650 nm) by the semiconductor. Biological effect and traits of the laser irradiation were also studied. A total of 60 healthy male SD rats were random-ly divided into the normal control group, model group, low energy density group (61.89 J/cm2)and high energy density group (247.57 J/cm2). The Freund's complete adjuvant (FCA) was intradermallyinjected into rats' right hind paw to establish AA rat model. The treatment group was treated with 650nm semiconductor laser irradiation on ST36-Zu-sanli with the energy density of 61.89 J/cm2 and 247.57 J/cm2, respectively. The joint swelling degree, pain thresh-old, TNF-α and IL-1β level changes were observed on thefirst, third and fifthtreatment after modeling. The results showed that compared with the normal group, the joint swelling degree, pain threshold, TNF-α, and IL-1β were obvi-ously increased in the model group (P<0.05). After five times treatment, the semiconductor laser with low and high energy density had effect on acute inflammation. And the high energy density treatment effect had a better effect than the low energy density one (P<0.05). It was concluded that the energy density of 61.89 J/cm2 and 247.57 J/cm2 of semiconductor laser irradiation on ST36-Zusanli can relieve acute inflammatory pain and swelling caused by AA; re-duce the TNF-α and IL-1β concentration levels. Semiconductor laser irradiation had the characteristics of stimula-tion or inhibition, cumulative effect and parabola. Low energy density group obtained the best effect between the third and fifth treatment.
