CAJ | 학술논문

采用低压-金属有机化学气相沉积（MOCVD）法在（0001）方向的AlN/蓝宝石模板上生长得到Al组分为40%的AlGaN材料，设计并制作了MSM型AlGaN 日盲紫外探测器。通过HRXRD，SEM，AFM对AlGaN材料进行了表征，结果表明：该材料为六方相结构，且应变程度很小，粗糙度（RMS）为1.32 nm。通过测试器件在230~320 nm之间、在不同偏压下的光谱响应曲线，发现器件的截止波长在285 nm附近，截止边很陡峭；器件的峰值响应波长为275 nm；在7 V偏压下，器件峰值响应度达到最大2.8 mA/W；零偏压下，器件的暗电流1×10-13A，器件的暗电流很小。
채용저압-금속유궤화학기상침적（MOCVD）법재（0001）방향적AlN/람보석모판상생장득도Al조분위40%적AlGaN재료，설계병제작료MSM형AlGaN 일맹자외탐측기。통과HRXRD，SEM，AFM대AlGaN재료진행료표정，결과표명：해재료위륙방상결구，차응변정도흔소，조조도（RMS）위1.32 nm。통과측시기건재230~320 nm지간、재불동편압하적광보향응곡선，발현기건적절지파장재285 nm부근，절지변흔두초；기건적봉치향응파장위275 nm；재7 V편압하，기건봉치향응도체도최대2.8 mA/W；령편압하，기건적암전류1×10-13A，기건적암전류흔소。
AlGaN material with 40%Al component was grown on AlN/sapphire substrate by low-voltage metal organic chemical vapor deposition(MOCVD)method. The AlGaN solar-blind UV photodetector with MSM structure was designed and fabricated. AlGaN material was characterized by using high resolution X-ray diffraction (HRXRD),scanning electron microscope (SEM) and atomic force microscopy(AFM). The results indicates that the material is hexagonal,its strain in the AlGaN is small and roughness(RMS)is 1.32 nm. According to the spectral response curve under various bias,it is found that the cut-off wave-length of the device is near 285 nm. The cut-off edge is very steep. The peak response wavelength is 275 nm. The peak respon-sivity is 2.8 mA/W at 7 V bias voltage. The dark current of detector is 1×10-13A under zero bias voltage,and very small.