中国有色金属学报（英文版）
中國有色金屬學報（英文版）
중국유색금속학보（영문판）
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
2014年
4期
1039-1045
,共7页
液固分离%近净成形%SiCp/Al电子封装壳体%热导率%热膨胀系数
液固分離%近淨成形%SiCp/Al電子封裝殼體%熱導率%熱膨脹繫數
액고분리%근정성형%SiCp/Al전자봉장각체%열도솔%열팽창계수
liquid-solid separation%near-net thixoforming%SiCp/Al electronic packaging shell%thermal conductivity%coefficient of thermal expansion
采用液固分离工艺制备高SiC体积分数Al基电子封装壳体(54%SiC，体积分数)，借助光学显微镜和扫描电镜分析壳体复合材料中 SiC 的形态分布及其断口形貌，并测定其物理性能和力学性能。结果表明：SiCp/Al壳体复合材料中Al基体相互连接构成网状，SiC颗粒均匀镶嵌分布于Al基体中。复合材料的密度为2.93 g/cm3，致密度为98.7%，热导率为175 W/(m·K)，热膨胀系数为10.3×10-6 K-1(25~400°C)，抗压强度为496 MPa，抗弯强度为404.5 MPa。复合材料的主要断裂方式为SiC颗粒的脆性断裂同时伴随着Al基体的韧性断裂，其热导率高于Si/Al合金的，热膨胀系数与芯片材料的相匹配。
採用液固分離工藝製備高SiC體積分數Al基電子封裝殼體(54%SiC，體積分數)，藉助光學顯微鏡和掃描電鏡分析殼體複閤材料中 SiC 的形態分佈及其斷口形貌，併測定其物理性能和力學性能。結果錶明：SiCp/Al殼體複閤材料中Al基體相互連接構成網狀，SiC顆粒均勻鑲嵌分佈于Al基體中。複閤材料的密度為2.93 g/cm3，緻密度為98.7%，熱導率為175 W/(m·K)，熱膨脹繫數為10.3×10-6 K-1(25~400°C)，抗壓彊度為496 MPa，抗彎彊度為404.5 MPa。複閤材料的主要斷裂方式為SiC顆粒的脆性斷裂同時伴隨著Al基體的韌性斷裂，其熱導率高于Si/Al閤金的，熱膨脹繫數與芯片材料的相匹配。
채용액고분리공예제비고SiC체적분수Al기전자봉장각체(54%SiC，체적분수)，차조광학현미경화소묘전경분석각체복합재료중 SiC 적형태분포급기단구형모，병측정기물이성능화역학성능。결과표명：SiCp/Al각체복합재료중Al기체상호련접구성망상，SiC과립균균양감분포우Al기체중。복합재료적밀도위2.93 g/cm3，치밀도위98.7%，열도솔위175 W/(m·K)，열팽창계수위10.3×10-6 K-1(25~400°C)，항압강도위496 MPa，항만강도위404.5 MPa。복합재료적주요단렬방식위SiC과립적취성단렬동시반수착Al기체적인성단렬，기열도솔고우Si/Al합금적，열팽창계수여심편재료적상필배。
The electronic packaging shell of high silicon carbide (54%SiC, volume fraction) aluminum-based composites was produced by liquid-solid separation technique. The characteristics of distribution and morphology of SiC as well as the shell’s fracture surface were examined by optical microscopy and scanning electron microscopy, and the thermo-physical and mechanical properties of the shell were also tested. The results show that Al matrix has a net-like structure while SiC is uniformly distributed in the Al matrix. The SiCp/Al composites have a low density of 2.93 g/cm3, and its relative density is 98.7%. Thermal conductivity of the composites is 175 W/(m·K), coefficient of thermal expansion (CTE) is 10.3×10-6 K-1 (25-400 °C), compressive strength is 496 MPa, bending strength is 404.5 MPa, and the main fracture mode is brittle fracture of SiC particles accompanied by ductile fracture of Al matrix.Its thermal conductivity is higher than that of Si/Al alloy, and its CTE matches with that of the chip material.
