红外与激光工程
紅外與激光工程
홍외여격광공정
INFRARED AND LASER ENGINEERING
2014年
4期
1222-1225
,共4页
刘晖%冯刘%张连东%程宏昌%高翔%张晓辉
劉暉%馮劉%張連東%程宏昌%高翔%張曉輝
류휘%풍류%장련동%정굉창%고상%장효휘
GaAs光阴极%激活%稳定性%表面势垒
GaAs光陰極%激活%穩定性%錶麵勢壘
GaAs광음겁%격활%은정성%표면세루
GaAs photocathode%activation%stability%surface barrier
为了提高Cs-O激活后GaAs光阴极的稳定性,延长像管的使用寿命,从Cs-O激活方面着手进行研究,寻找解决途径。改变GaAs光阴极激活中的Cs过量,并在线监测真空环境下光电流的变化情况,寻找激活对GaAs光阴极稳定性的影响因素。分别进行3组5种比例的激活实验,在光电流下降至Cs峰峰值90%、70%、50%、30%和10%时给O进行交替激活。激活结束后,在低于1×10-8 Pa的真空环境下在线监控30 min内的光电流,发现过Cs90%、70%、50%激活的光阴极稳定性好,过Cs30%次之,过Cs10%相对最差。结果表明:GaAs光阴极Cs-O激活时,Cs量越多,表面势垒的建构越完整,光阴极的稳定性就越好,对改善GaAs光阴极稳定性,延长使用寿命具有重要意义。
為瞭提高Cs-O激活後GaAs光陰極的穩定性,延長像管的使用壽命,從Cs-O激活方麵著手進行研究,尋找解決途徑。改變GaAs光陰極激活中的Cs過量,併在線鑑測真空環境下光電流的變化情況,尋找激活對GaAs光陰極穩定性的影響因素。分彆進行3組5種比例的激活實驗,在光電流下降至Cs峰峰值90%、70%、50%、30%和10%時給O進行交替激活。激活結束後,在低于1×10-8 Pa的真空環境下在線鑑控30 min內的光電流,髮現過Cs90%、70%、50%激活的光陰極穩定性好,過Cs30%次之,過Cs10%相對最差。結果錶明:GaAs光陰極Cs-O激活時,Cs量越多,錶麵勢壘的建構越完整,光陰極的穩定性就越好,對改善GaAs光陰極穩定性,延長使用壽命具有重要意義。
위료제고Cs-O격활후GaAs광음겁적은정성,연장상관적사용수명,종Cs-O격활방면착수진행연구,심조해결도경。개변GaAs광음겁격활중적Cs과량,병재선감측진공배경하광전류적변화정황,심조격활대GaAs광음겁은정성적영향인소。분별진행3조5충비례적격활실험,재광전류하강지Cs봉봉치90%、70%、50%、30%화10%시급O진행교체격활。격활결속후,재저우1×10-8 Pa적진공배경하재선감공30 min내적광전류,발현과Cs90%、70%、50%격활적광음겁은정성호,과Cs30%차지,과Cs10%상대최차。결과표명:GaAs광음겁Cs-O격활시,Cs량월다,표면세루적건구월완정,광음겁적은정성취월호,대개선GaAs광음겁은정성,연장사용수명구유중요의의。
In order to improve the stability of GaAs photocathodes after Cs-O activation and prolong the lifetime of image tubes, Cs-O activation was studied to find appropriate solutions. Combined changing the excess amount of Cs in activation with online monitoring of photocurrent in UHV, the factors influencing the stability of GaAs photocathode were investigated. Three groups of experiments were carried out, and same five kinds of Cs excess proportion were included in each group. After the photocurrent decreased to 90%, 70%, 50%, 30% and 10% of the Cs peak value, oxygen was introduced for alternate activation. It was found that the stability of photocathodes with Cs excess of 90%, 70% and 50% was better and the stability of 30% or 10% was worse by online monitoring of photocurrent during 30 min in UHV of less than 1×10-8 Pa. The results indicate that with more Cs amount in Cs-O activation the construction of surface barrier is more integrated and the stability of photocathode is better. These results are important for improving the stability of GaAs photocathodes and prolonging the lifetime of image tubes.