CAJ | 학술논문

越来越多的民用与军事对高灵敏度紫外探测的需求促进了GaN基雪崩光电二极管(APD)的快速发展。雪崩光电二极管工作在高反偏电压状态，器件内部载流子在高场下发生碰撞离化，从而使探测信号产生增益。首先对GaN基雪崩光电二极管的研究进展进行了回顾，然后重点报道了器件的增益最大可达3×105，介绍了本征层厚度与器件暗电流的关系，简单介绍了正在组建的基于相敏探测的交流增益测试系统，并研究了过剩噪声与调制频率之间的关系，发现在低频波段(30~2 kHz)，过剩噪声呈现1/f噪声特性。最后，对盖革模式的雪崩光电二极管的研究进展及应用前景进行了简单介绍。
월래월다적민용여군사대고령민도자외탐측적수구촉진료GaN기설붕광전이겁관(APD)적쾌속발전。설붕광전이겁관공작재고반편전압상태，기건내부재류자재고장하발생팽당리화，종이사탐측신호산생증익。수선대GaN기설붕광전이겁관적연구진전진행료회고，연후중점보도료기건적증익최대가체3×105，개소료본정층후도여기건암전류적관계，간단개소료정재조건적기우상민탐측적교류증익측시계통，병연구료과잉조성여조제빈솔지간적관계，발현재저빈파단(30~2 kHz)，과잉조성정현1/f조성특성。최후，대개혁모식적설붕광전이겁관적연구진전급응용전경진행료간단개소。
The investigation of GaN-based avalanche photodiodes(APDs) was motivated by the demand of high sensitivity ultraviolet detectors in numerous civilian and military applications. APDs operate under high reverse bias voltage, and carriers in the device caused impact ionization under high electric fields, as a result, the avalanche multiplication could be obtained. In this paper, reviews were made on the development of GaN-based avalanche photodiodes, the largest value of gain in this work was nearly 3 × 105. Relationship between width of the intrinsic layer and dark current has been studied. The measuring system based on phase sensitive detecting technique has been shown. Relationships between modulating frequencies and noise has also been investigated . It was found that in the range of low frequency ( 30-2 kHz), the excess noise behaved as 1/f noise. In the end, the recent developments and applications of the Geiger mode operations of GaN-based APDs are introduced.