CAJ | 학술논문

利用 Sol-Gel 法在 Pt/TiO2/SiO2/Si 基底上用快速热处理（Rapid Thermal Processing，RTP）退火工艺制备出了致密的PZT 铁电薄膜，主要研究了在退火时间为500s 时退火温度对薄膜的结晶结构、表面形貌和铁电性能的影响。通过 X 射线衍射仪（XRD）、扫描电子显微镜（SEM）和铁电测试仪对制备的薄膜进行了性能表征。研究结果表明，当退火温度为6000C时，PZT薄膜具有（111）择优取向，表面致密无裂纹，且具有较好的铁电性能（其饱和极化值约为30 C/cm2，剩余极化约为20 C/cm2，矫顽场约为150KV/cm）。在100KV/cm 电场下，电流密度 J 在10-1 A/cm2数量级，表明所制的 PZT 纳米薄膜质量较好，能承受较高的场强以达到饱和极化状态而不被击穿。
이용 Sol-Gel 법재 Pt/TiO2/SiO2/Si 기저상용쾌속열처리（Rapid Thermal Processing，RTP）퇴화공예제비출료치밀적PZT 철전박막，주요연구료재퇴화시간위500s 시퇴화온도대박막적결정결구、표면형모화철전성능적영향。통과 X 사선연사의（XRD）、소묘전자현미경（SEM）화철전측시의대제비적박막진행료성능표정。연구결과표명，당퇴화온도위6000C시，PZT박막구유（111）택우취향，표면치밀무렬문，차구유교호적철전성능（기포화겁화치약위30 C/cm2，잉여겁화약위20 C/cm2，교완장약위150KV/cm）。재100KV/cm 전장하，전류밀도 J 재10-1 A/cm2수량급，표명소제적 PZT 납미박막질량교호，능승수교고적장강이체도포화겁화상태이불피격천。
By Rapid thermal annealing process with the Sol - Gel method,the dense PZT ferroelectric thin films are prepared on Pt/TiO2/SiO2/ Si substrate ,and the influence of annealing temperature on the crystalline structure, surface morphology and fer-roelectric properties of thin films is studied when the annealing time is 500s. By X-ray diffraction (XRD), scanning electron microscopy (SEM) and ferroelectric tester, thin films are characterized. The results show that, PZT films with (111) preferred orientation, dense surface without cracks have good ferroelectric properties (the saturated polarization value with 30 C/cm2, the remaining polarization value with 20 C/cm2, the Coercive field value with 150KV/cm) ,when the annealing temperature is 6000 C; In 100KV/cm electric field, current density J is in 10-1 A/cm2 magnitude, indicating that the PZT nano-films have better qual-ity, and can withstand high field strength to reach the saturation polarization state without breakdown.