CAJ | 학술논문

利用蛋白质发泡法制备泡沫SiC陶瓷，以聚碳硅烷（PCS）为先驱体，采用化学气相沉积（CVD）工艺在泡沫SiC中原位生长出大量SiC纳米线。使用X射线衍射仪，扫描电子显微镜和透射电子显微镜对纳米线的物相组成和微观形貌进行表征。结果表明，纳米线直径为100~200nm，长度达到数百微米，均匀分布在泡沫SiC的气孔中，纳米线由沿<111>方向生长的β-SiC晶体组成，在纳米线顶端未发现球状催化剂存在，表明其生长机理主要为气-固（VS）生长机理。
이용단백질발포법제비포말SiC도자，이취탄규완（PCS）위선구체，채용화학기상침적（CVD）공예재포말SiC중원위생장출대량SiC납미선。사용X사선연사의，소묘전자현미경화투사전자현미경대납미선적물상조성화미관형모진행표정。결과표명，납미선직경위100~200nm，장도체도수백미미，균균분포재포말SiC적기공중，납미선유연<111>방향생장적β-SiC정체조성，재납미선정단미발현구상최화제존재，표명기생장궤리주요위기-고（VS）생장궤리。
Proteins are used as foaming agents and curing agents to fabricate SiC foam and large areas of SiC nanowires are synthesized in the SiC foam by chemi-cal vapor deposition method. Polycarbosilane is used as the precursor. The morphology, microstructure and compo-sition of the prepared SiC nanowires were characterized by XRD, SEM and TEM. The results show that the nanowires exist in the channels of the foam body with diameters in the range of 100~200 nanometers and length of hundreds micrometers, and are composed of a single-crystalβ-SiC structure with the <1 1 1> growth direction. A vapor-solid mechanism process is discussed as a possible growth mechanism of theβ-SiC nanowires.