CAJ | 학술논문

采用 STM 以及 RHEED 技术对于 GaAs (001)的表面形貌相变过程(有序平坦→无序平坦→粗糙)进行了深入研究。通过 GaAs (001)在不同 As BEP、不同温度的表面形貌相变过程的研究发现,As BEP和温度的变化是促使表面形貌相变发生的主要原因,高温引起原子重组致使表面重构的演变是 GaAs (001)薄膜发生表面形貌相变的主要内在机制。单一表面重构或某一重构占绝对优势的表面形貌处于有序平坦状态；多种重构的非等量混合表面是无序平坦状态的主要表面形式；当表面重构难以辨别时,表面形貌也将进入岛上高岛、坑中深坑的粗糙状态。研究还观察到,当As BEP和温度足够高时,GaAs(001)表面形貌相变将不会出现无序平坦状态,表面将直接从平坦转变为粗糙状态。
채용 STM 이급 RHEED 기술대우 GaAs (001)적표면형모상변과정(유서평탄→무서평탄→조조)진행료심입연구。통과 GaAs (001)재불동 As BEP、불동온도적표면형모상변과정적연구발현,As BEP화온도적변화시촉사표면형모상변발생적주요원인,고온인기원자중조치사표면중구적연변시 GaAs (001)박막발생표면형모상변적주요내재궤제。단일표면중구혹모일중구점절대우세적표면형모처우유서평탄상태；다충중구적비등량혼합표면시무서평탄상태적주요표면형식；당표면중구난이변별시,표면형모야장진입도상고도、갱중심갱적조조상태。연구환관찰도,당As BEP화온도족구고시,GaAs(001)표면형모상변장불회출현무서평탄상태,표면장직접종평탄전변위조조상태。
Surface morphology transition processes (ordered flat →disordered flat →rough)on GaAs(001)sur-face were studied using scanning tunneling microscope and reflection high energy electron diffraction.We found that changes of Arsenic beam equivalent pressure and temperature were the main reason of the evolution of sur-face morphology transition.Atoms recombination were caused by high temperature which resulting in surface reconstruction changed,which was the main internal mechanism and played key role during the process of sur-face morphology transition on GaAs(001)surface.The surface morphology which consists of uniform surface reconstruction or one reconstruction hold absolute majority was in the state of ordered flat;and the surface mor-phology which mixed by multiple reconstructions was in disordered flat;when the surface reconstruction was difficult to distinguish,which surface morphology was in rough state.During our experiments we have an inter-esting discovery that the state of disordered flat should disappear at the processes of surface morphology transi-tion on GaAs(001)surface while temperature and Arsenic beam equivalent pressure were high enough.