CAJ | 학술논문

采用等离子增强化学气象沉积（plasma enhanced chemical vapor deposition，PECVD）法在普通玻璃上沉积非晶硅薄膜材料.通过控制变量分别研究了 p，n 层的掺杂浓度、氢稀释度及 i 层的反应气压对薄膜材料性能的影响.结果表明：p 层材料在掺杂浓度为6.67%、氢稀释度为10.6时有较高的暗电导率和较低的沉积速率；n 层材料在掺杂浓度为3.33%、氢稀释度为8.3时有较高的暗电导率和较低的沉积速率；i 层材料在反应气压为95 Pa、氢稀释度为15时有较高的光暗电导率之比.
채용등리자증강화학기상침적（plasma enhanced chemical vapor deposition，PECVD）법재보통파리상침적비정규박막재료.통과공제변량분별연구료 p，n 층적참잡농도、경희석도급 i 층적반응기압대박막재료성능적영향.결과표명：p 층재료재참잡농도위6.67%、경희석도위10.6시유교고적암전도솔화교저적침적속솔；n 층재료재참잡농도위3.33%、경희석도위8.3시유교고적암전도솔화교저적침적속솔；i 층재료재반응기압위95 Pa、경희석도위15시유교고적광암전도솔지비.
The amorphous silicon thin film was deposited on glass by using plasma enhanced chemical vapor deposition(PECVD)method. The influence of doping concentration and hydrogen dilution on thin film prop-erty,and the influence of reaction pressure on the i-layer property were investigated. The results indicated that the p-layer had a higher dark-conductivity and a lower deposition rate when the doping concentration and the hydrogen dilution were about 6. 67% and 10. 6,respectively. The n-layer had a higher dark-conductivity and a lower deposition rate when the doping concentration and the hydrogen dilution were about 3. 33% and 8. 3, respectively. Also the i-layer thin film had a higher photoconductivity and a dark-conductivity ratio when the reaction pressure and the hydrogen dilution were about 95 Pa and 15,respectively.