CAJ | 학술논문

以一甲基三氯硅烷为先驱体原料（ MTS），H2气为载气，采用化学气相沉积（ CVD）工艺，在Si基体表面制备SiC膜层。利用XPS、XRD、SEM以及HRTEM等表征方法，研究当沉积为SiC＋C时，游离碳对SiC膜层微观结构及其力学性能的影响。结果表明，膜层由SiC和C两相组成，形成SiC/C复合膜层结构，游离碳引起SiC晶粒细化。在SiC/C膜层中，游离碳的石墨化程度低，主要以无定形结构存在于SiC晶粒之间，形成富C区。由于SiC膜层中含有富C区，填充了SiC晶粒之间缺陷，这有利于提高SiC膜层的机械强度，以及改善SiC/Si之间的晶格匹配。
이일갑기삼록규완위선구체원료（ MTS），H2기위재기，채용화학기상침적（ CVD）공예，재Si기체표면제비SiC막층。이용XPS、XRD、SEM이급HRTEM등표정방법，연구당침적위SiC＋C시，유리탄대SiC막층미관결구급기역학성능적영향。결과표명，막층유SiC화C량상조성，형성SiC/C복합막층결구，유리탄인기SiC정립세화。재SiC/C막층중，유리탄적석묵화정도저，주요이무정형결구존재우SiC정립지간，형성부C구。유우SiC막층중함유부C구，전충료SiC정립지간결함，저유리우제고SiC막층적궤계강도，이급개선SiC/Si지간적정격필배。
SiC was deposited on the surface of Si substrate by chemical vapor deposition technique,with methyltrichlorosilane (MTS)as the SiC gaseous source and H2 as carrier gas respectively.The effects of the free carbon on microstructure of SiC film were investigeted by X-ray diffraction( XPS) ,X-ray diffraction( XRD) ,scanning electron microscop( SEM) and high resolution transmis-sion electron microscope(HRTEM).The results indicate that the SiC/C composite film is consisted of SiC grains and amorphous car-bon mixed some graphite crystallites,which can reduce the grain size of SiC.In addition,the free carbon within SiC film was detected in the gap of SiC grains.The changes in microstrure can increase the mechanical strength of SiC film and improve the SiC/Si crystal lattice matching.