稀土学报（英文版）
稀土學報（英文版）
희토학보（영문판）
JOURNAL OF RARE EARTHS
2014年
6期
580-584
,共5页
陈帅%刘正堂%冯丽萍%车兴森%赵小如
陳帥%劉正堂%馮麗萍%車興森%趙小如
진수%류정당%풍려평%차흥삼%조소여
HfO2%thin films%dielectric%rare earths
The undoped and Yb-doped HfO2 thin films were deposited on p-type single crystal Si(100) substrates using RF magnetron sputtering method. The structure and electrical properties were investigated as a function of doping concentrations. The results showed that the presence of Yb could stabilize HfO2 in cubic phase. The dielectric constant was enhanced after in-troducing Yb3+ ions into the HfO2 host. Compared with undoped HfO2 thin film, the Yb-doped HfO2 thin film exhibited a low leakage current. The silicate reaction between rare earth ions and SiO2 layers was used to eliminate interfacial silica and form a stable interface.
