电镀与涂饰
電鍍與塗飾
전도여도식
ELECTROPLATING & FINISHING
2014年
7期
283-286
,共4页
钛合金%微弧氧化%电流密度%表面形貌
鈦閤金%微弧氧化%電流密度%錶麵形貌
태합금%미호양화%전류밀도%표면형모
titanium alloy%micro-arc oxidation%current density%surface morphology
采用恒流和梯度电流两种方式对TC4钛合金进行微弧氧化,微弧氧化液组成和工艺参数为:Na2SiO316 g/L,(NaPO3)68 g/L,NaF 2 g/L,频率500 Hz,占空比10%。研究了不同电流模式下电压随微弧氧化时间的变化。对比研究了两种电流模式下所得微弧氧化膜的表面形貌、厚度、粗糙度、显微硬度等性能。结果表明,恒流模式下,随电流密度升高,氧化膜层的终止电压、厚度、粗糙度和表面微孔直径增大,显微硬度先增大后减小;与恒流模式膜层相比,梯度电流模式下所得氧化膜层较厚,粗糙度较低,硬度高,表面微孔直径较小。较适宜的恒流电流密度和梯度电流密度分别为10 A/dm2和15-5 A/dm2,而后者所得膜层的综合性能优于前者所得膜层。
採用恆流和梯度電流兩種方式對TC4鈦閤金進行微弧氧化,微弧氧化液組成和工藝參數為:Na2SiO316 g/L,(NaPO3)68 g/L,NaF 2 g/L,頻率500 Hz,佔空比10%。研究瞭不同電流模式下電壓隨微弧氧化時間的變化。對比研究瞭兩種電流模式下所得微弧氧化膜的錶麵形貌、厚度、粗糙度、顯微硬度等性能。結果錶明,恆流模式下,隨電流密度升高,氧化膜層的終止電壓、厚度、粗糙度和錶麵微孔直徑增大,顯微硬度先增大後減小;與恆流模式膜層相比,梯度電流模式下所得氧化膜層較厚,粗糙度較低,硬度高,錶麵微孔直徑較小。較適宜的恆流電流密度和梯度電流密度分彆為10 A/dm2和15-5 A/dm2,而後者所得膜層的綜閤性能優于前者所得膜層。
채용항류화제도전류량충방식대TC4태합금진행미호양화,미호양화액조성화공예삼수위:Na2SiO316 g/L,(NaPO3)68 g/L,NaF 2 g/L,빈솔500 Hz,점공비10%。연구료불동전류모식하전압수미호양화시간적변화。대비연구료량충전류모식하소득미호양화막적표면형모、후도、조조도、현미경도등성능。결과표명,항류모식하,수전류밀도승고,양화막층적종지전압、후도、조조도화표면미공직경증대,현미경도선증대후감소;여항류모식막층상비,제도전류모식하소득양화막층교후,조조도교저,경도고,표면미공직경교소。교괄의적항류전류밀도화제도전류밀도분별위10 A/dm2화15-5 A/dm2,이후자소득막층적종합성능우우전자소득막층。
The micro-arc oxidation of TC4 alloy was conducted in a bath containing Na2SiO3 16 g/L, (NaPO3)6 8 g/L, and NaF 2 g/L at frequency 500 Hz and duty cycle 10% under constant current and gradient current modes, respectively. The variation of voltage with micro-arc oxidation time under different current modes was examined. The surface morphology, thickness, roughness, and microhardness of the micro-arc oxidation films obtained under different current modes were comparatively studied. The results showed that with the increase of current density at constant current, the cut-off voltage, thickness, roughness, and micropore diameter on the surface of micro-arc oxidation film are increased, while its microhardness is increased initially and then decreased. The oxidation film obtained at gradient current has higher thickness, lower roughness, higher microhardness, and smaller micropore diameter than that obtained at constant current. The suitable current density is 10 A/dm2 for constant current mode and from 15 to 5 A/dm2 for gradient current mode. The comprehensive performance of the film obtained at 15-5 A/dm2 is better than that obtained at 10 A/dm2.