CAJ | 학술논문

本文中，我们采用空心阴极等离子体增强化学气相沉积（MHC-PECVD）在玻璃、表面溅射氧化铟锡（ITO）的玻璃（玻璃+ITO）以及表面溅射ITO的聚酰亚胺（PI+ITO）柔性衬底上沉积氢化微晶硅（μc-Si：H），研究不同衬底材料对微晶硅薄膜性质的影响。我们发现在 PI+ITO衬底上沉积薄膜的结晶率（Xc）最小，且结晶率最大值时的温度依赖沉底材料：对于 PI+ITO 衬底来说，结晶率最大值时的温度为200℃，而对于玻璃和玻璃+ITO 衬底来说，这个温度会在250℃~300℃之间浮动。我们认为PI+ITO衬底上薄膜较低的结晶率与其较高的热膨胀系数（CTE）以及小分子和气体的释放有关。
본문중，아문채용공심음겁등리자체증강화학기상침적（MHC-PECVD）재파리、표면천사양화인석（ITO）적파리（파리+ITO）이급표면천사ITO적취선아알（PI+ITO）유성츤저상침적경화미정규（μc-Si：H），연구불동츤저재료대미정규박막성질적영향。아문발현재 PI+ITO츤저상침적박막적결정솔（Xc）최소，차결정솔최대치시적온도의뢰침저재료：대우 PI+ITO 츤저래설，결정솔최대치시적온도위200℃，이대우파리화파리+ITO 츤저래설，저개온도회재250℃~300℃지간부동。아문인위PI+ITO츤저상박막교저적결정솔여기교고적열팽창계수（CTE）이급소분자화기체적석방유관。
In this work , we employed micro-hollow cathode (MHC)to perform plasma enhanced chemical vapor deposition (PECVD)of hydrogenated microcrystalline silicon (μc-Si:H). The impact of substrate materials on the μc-Si:H film quality was explored . Three kinds of substrates , i . e . glass , indium tin oxide (ITO)coating glass and ITO coated polyimide(PI)were selected for these researches . We found that crystalline volume fraction (notated as Xc)on the ITO coated PI substrate was the smallest in three kinds of substrates , and the temperature at maximum Xc depends on substrate materials:for ITO coated PI substrate , the temperature at maximum Xc was 200℃, whereas it was 250℃~300℃ for the glass and ITO coated glass sub-strates.We assume that the lower Xc on the ITO coated PI substrate is related to the high expansion coefficient of plastic and the small molecules and gas releasing from the substrate .