CAJ | 학술논문

利用闭合磁场非平衡磁控溅射工艺制备出C掺杂型NiCr合金薄膜电阻材料，获得了电性能优于NiCr合金薄膜的NiCrC薄膜电阻材料。实验结果表明： NiCr薄膜中掺杂C元素后，薄膜的择优取向由Ni(011)变为Ni(111)；薄膜的缺陷和应力得以减小；薄膜中C元素具有类石墨性质。
이용폐합자장비평형자공천사공예제비출C참잡형NiCr합금박막전조재료，획득료전성능우우NiCr합금박막적NiCrC박막전조재료。실험결과표명： NiCr박막중참잡C원소후，박막적택우취향유Ni(011)변위Ni(111)；박막적결함화응력득이감소；박막중C원소구유류석묵성질。
The electrical properties of C-doped NiCr alloy thin film used as resistor materials, which is obtained by unbalanced magnetron sputtering process in the closed magnetic field, are found to be better than that of NiCr alloy thin films. The results from the experiment conducted in this research show that the preferred orientations of NiCrC thin film is Ni(011), while that of NiCr thin film is Ni(111);Also found is that the defects and stresses in NiCrC are reduced, and the carbon in NiCrC thin film possesses the graphite-like structure.