CAJ | 학술논문

新兴的非易失性相变存储内存PCRAM具有比DRAM更好的扩展性、功耗更低等特点,但其本身存在磨损错误的问题。目前非易失性内存的最新容错技术Free-p方法在非易失性内存寿命后期会频繁引起操作系统中断,影响系统性能和可靠性,甚至会导致内存系统的拒绝服务攻击。Smart-p方法针对Free-p方法做了改进,提出了粗粒度重映射和细粒度重映射相结合的PCRAM磨损错误恢复机制,使得映射粒度灵活可变。该方法在不影响PCRAM使用寿命的情况下,使操作系统中断数量下降54%,减少了中断对系统性能的影响,提高了系统的可靠性和安全性。
신흥적비역실성상변존저내존PCRAM구유비DRAM경호적확전성、공모경저등특점,단기본신존재마손착오적문제。목전비역실성내존적최신용착기술Free-p방법재비역실성내존수명후기회빈번인기조작계통중단,영향계통성능화가고성,심지회도치내존계통적거절복무공격。Smart-p방법침대Free-p방법주료개진,제출료조립도중영사화세립도중영사상결합적PCRAM마손착오회복궤제,사득영사립도령활가변。해방법재불영향PCRAM사용수명적정황하,사조작계통중단수량하강54%,감소료중단대계통성능적영향,제고료계통적가고성화안전성。
The emerging non-volatile memories such as phase-change memory（PCRAM） have characteristics of higher scalability and lower power consumption compared with DRAM,but the problem of wear-out exists inherently.At present,as the latest fault-tolerant technology,Free-p will cause more interrupts to the operating system,affect system performance and stability,and even may cause denial of memory service.In this paper,we improve the Free-p method and propose a Smart-p PCRAM wear-out recovery mechanism,which makes remapping grain able to switch between fine-and course-grained remapping.Smart-p reduces the number of operating system interrupts by 54% without impacts on the write endurance of PCRAM,which alleviates the burden caused by the interrupts and improves system stability and security.