CAJ | 학술논문

采用水热方法在Si（100）衬底上制备ZnO纳米线．利用提拉法在Si衬底上首先制备ZnO晶种层，然后利用水热法在晶种层上生长ZnO纳米线．在不同温度下的NH。气氛中，对zn0纳米线进行退火处理．系统地研究了NHs退火对ZnO纳米线光学性质的影响，在低温光致发光光谱中观察到了-9氮受主相关的光发射，并通过自由电子一受主辐射复合光发射确定受主离化能为129meV．实验结果还表明，随着退火温度的升高，施主一受主对辐射复合发光呈现了微弱红移现象．在700℃退火的条件下制备的ZnO纳米线的低温PL谱中，观察到较为明显的自由激子光发射，并采用理论拟合进行证明．
채용수열방법재Si（100）츤저상제비ZnO납미선．이용제랍법재Si츤저상수선제비ZnO정충층，연후이용수열법재정충층상생장ZnO납미선．재불동온도하적NH。기분중，대zn0납미선진행퇴화처리．계통지연구료NHs퇴화대ZnO납미선광학성질적영향，재저온광치발광광보중관찰도료-9담수주상관적광발사，병통과자유전자일수주복사복합광발사학정수주리화능위129meV．실험결과환표명，수착퇴화온도적승고，시주일수주대복사복합발광정현료미약홍이현상．재700℃퇴화적조건하제비적ZnO납미선적저온PL보중，관찰도교위명현적자유격자광발사，병채용이론의합진행증명．
The ZnO nanowires were prepared on Si （100） substrate by hydrothermal technology. Prior to the growth of nanowires, thin ZnO seed layer was prepared on the surface of Si substrate by coating. Then, oriented ZnO nanowires were grown on the seed layer through hydrothermal method. The ZnO nanowires were annealed in NH3 at different temperatures. The effect of anneal on their photoluminescence （PL） properties were systematically studied. N acceptor-related emissions appeared in low-temperature PL spectra. The ionization energy of N acceptor was determined as 129 meV from free-electron-to-acceptor （FA） transition. In addition, donor-acceptor pair （DAP） emission showed a slight redshift with increasing annealing temperature. An obvious free-exiton （FE） emission was observed in the PL spectra of ZnO nanowires annealed at 700℃. This phenomenon was proved with theory fitting.