兵工学报:英文版
兵工學報:英文版
병공학보:영문판
Journal of China Ordnance
2012年
1期
35-40
,共6页
吴蓉%朱顺官%张琳%李燕%冯红艳
吳蓉%硃順官%張琳%李燕%馮紅豔
오용%주순관%장림%리연%풍홍염
plasma physics%semiconductor bridge%plasma temperature%atomic emission spectrometry%discharge pulse
The plasma temperature of the semiconductor bridge (SCB) was measured in real-time according to relative intensity ratio of dual lines of atomic emission spectrum.The plasma temperature under different discharge pulses and the influence of discharge pulse energy on it were studied.The results show that the plasma peak temperature rises gradually with the increase of initial discharging voltage and charging capacitance.For the capacitance of 22 μF,if the initial discharging voltage increases from 21 V to 63 V,the plasma peak temperature rises from 2 000 K to 6 200 K.For the discharging voltage of 39 V,the peak temperature rises from 2 200 K to 3 800 K when the capacitance increases from 6.8 μF to 100 μF.The change of pulse discharge has a very small effect on the plasma temperature at the late time discharge (LTD).In view of the change of plasma temperature with the pulse energy,the discharging voltage has a greater effect on the plasma temperature than the capacitance.The results provide some experimental basis for the further research on SCB ignition and detonation mechanisms.