电子工艺技术
電子工藝技術
전자공예기술
ELECTRONICS PROCESS TECHNOLOGY
2012年
2期
90-92
,共3页
钽电解电容器%击穿电压%氧化膜强化%回流焊
鐽電解電容器%擊穿電壓%氧化膜彊化%迴流銲
단전해전용기%격천전압%양화막강화%회류한
Tantalum electrolytic capacitor%Breakdown voltage%Reinforced oxide film%Reflow soldering
采用氧化膜强化技术在钽阳极体外表面形成抗机械应力的强化氧化膜,并模拟钽电容器回流焊过程,研究回流焊前后钽电容器漏电流变化以及对击穿电压（BDV）的影响。试验结果显示：在回流焊安装前后,应用氧化膜强化技术的电容器漏电流增幅小于普通产品14%;耐BDV比普通产品高6 V。
採用氧化膜彊化技術在鐽暘極體外錶麵形成抗機械應力的彊化氧化膜,併模擬鐽電容器迴流銲過程,研究迴流銲前後鐽電容器漏電流變化以及對擊穿電壓（BDV）的影響。試驗結果顯示：在迴流銲安裝前後,應用氧化膜彊化技術的電容器漏電流增幅小于普通產品14%;耐BDV比普通產品高6 V。
채용양화막강화기술재단양겁체외표면형성항궤계응력적강화양화막,병모의단전용기회류한과정,연구회류한전후단전용기루전류변화이급대격천전압（BDV）적영향。시험결과현시：재회류한안장전후,응용양화막강화기술적전용기루전류증폭소우보통산품14%;내BDV비보통산품고6 V。
Oxide film reinforcement technology was used to form robust oxide film to resist mechanical stress on the outer surface of tantalum anode. Simulated reflow soldering process for tantalum Capacitor and made a study on DC leakage current change before and after reflew soldering and influence of reinforced oxide film on breakdown voltaoe. The result of tests showed for the capacitors prepared with reinforced oxide film, the rise of DC leakage current before and after reflow soldering has reduced by 14% compared with the capacitors prepared with conventional production process; Breakdown voltage measured is 6V higher than the capacitors prepared with conventional production process.
