CAJ | 학술논문

由Schr?dinger方程出发,基于(101)单轴应力下Si材料导带E-k解析模型,重点研究沿任意晶向(101)单轴应力对Si材料电子电导率有效质量的影响。结果表明：(101)单轴应力沿0o和45o晶向均导致导带底附近的六度简并能谷分裂成两组分立的能谷；(101)单轴张应力下,沿45o晶向的电子电导率有效质量随应力增大而明显减小,沿0o和90o晶向的电子电导率有效质量随应力增大而明显增大；(101)单轴压应力下,Si材料沿高对称晶向的电子电导率有效质量随应力增大而明显增大或几乎不变。
유Schr?dinger방정출발,기우(101)단축응력하Si재료도대E-k해석모형,중점연구연임의정향(101)단축응력대Si재료전자전도솔유효질량적영향。결과표명：(101)단축응력연0o화45o정향균도치도대저부근적륙도간병능곡분렬성량조분립적능곡；(101)단축장응력하,연45o정향적전자전도솔유효질량수응력증대이명현감소,연0o화90o정향적전자전도솔유효질량수응력증대이명현증대；(101)단축압응력하,Si재료연고대칭정향적전자전도솔유효질량수응력증대이명현증대혹궤호불변。
Based on the theories of strain tensor,the E-k relation for conduction band in uniaxial strained Si(101) materials was established by Schr?dinger equation. And then the model of electronic conductivity effective mass along arbitrary crystal direction in uniaxial-strained Si(101)is obtained. According to results,(101)uniaxial Stress causes six degrees of degeneracy of valley near the bottom of the conduction band splitting into two groups of discrete energy valley;electronic conductivity effective masses obviously decreases along 45o direction but increases along 0oand 90odirections,with increasing(101)uniaxial tensile stress;electronic conductivity effective masse of Si material along highly symmetric directions obviously increases or almost remains unchanged,with increasing(101) uniaxial press stress. The above results can provide valuable references for the study on strain Si material and the conduction channel design related to stress and orientation in the Si-based strain nMOSFETs.