电子工业专用设备
電子工業專用設備
전자공업전용설비
EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING
2012年
4期
33-36
,共4页
翘曲度%弯曲度%总厚度变化%背封%外延
翹麯度%彎麯度%總厚度變化%揹封%外延
교곡도%만곡도%총후도변화%배봉%외연
WARP%BOW%TTV%Back seal%Epi
通过研究P/P＋外延片制备过程中衬底加工、背损背封、化学机械抛光、外延生长等各主要工艺对晶片总厚度变化、弯曲度、翘曲度等几何参数的影响,来分析晶片内应力的变化。重点研究了衬底片加工和外延生长各工序中内应力不断累积,晶片几何参数变化较大的现象,以便解决在器件研制的快速变温过程容易产生形变等问题。
通過研究P/P＋外延片製備過程中襯底加工、揹損揹封、化學機械拋光、外延生長等各主要工藝對晶片總厚度變化、彎麯度、翹麯度等幾何參數的影響,來分析晶片內應力的變化。重點研究瞭襯底片加工和外延生長各工序中內應力不斷纍積,晶片幾何參數變化較大的現象,以便解決在器件研製的快速變溫過程容易產生形變等問題。
통과연구P/P＋외연편제비과정중츤저가공、배손배봉、화학궤계포광、외연생장등각주요공예대정편총후도변화、만곡도、교곡도등궤하삼수적영향,래분석정편내응력적변화。중점연구료츤저편가공화외연생장각공서중내응력불단루적,정편궤하삼수변화교대적현상,이편해결재기건연제적쾌속변온과정용역산생형변등문제。
In this paper,the inside stress transformation in the manufacturing process of P/P＋ Silicon epitaxial wafer was analyzed through the influence of main techniques including substrate machining、back trauma and sealing、 chemical mechanical polishing and Epi growth to geometric parameters such as TTV、BOW、WARP,eta.Inside stress accumulation and the huge changing of geometric parameters was studied emphasized in the process of substrate machining and Epi growth,aiming to decrease transmogrification aroused by huge temperature change in the device manufacturing process.
