CAJ | 학술논문

考虑了焦耳热导致的玻璃基片温度升高效应，建立了玻璃基片上电场辅助离子迁移(FAIM)过程中离子迁移深度的计算模型。该模型首先通过求解玻璃基片的热平衡方程获得玻璃基片温度随时间的变化规律，在此基础上获得流过玻璃基片的电流密度以及电荷通量密度随时间的变化规律。最后利用电荷通量密度与离子迁移深度的正比关系计算离子迁移深度。利用该模型获得的模拟结果与实验结果的比较显示，在集成光学器件制作的实验参数下，利用该模型所获得的离子迁移深度变化的规律与相应的实验结果接近。分析表明，由于模型中考虑到了焦耳热导致的玻璃基片温度的升高，该模型用于研究FAIM过程中的迁移深度具有更好的普适性。
고필료초이열도치적파리기편온도승고효응，건립료파리기편상전장보조리자천이(FAIM)과정중리자천이심도적계산모형。해모형수선통과구해파리기편적열평형방정획득파리기편온도수시간적변화규률，재차기출상획득류과파리기편적전류밀도이급전하통량밀도수시간적변화규률。최후이용전하통량밀도여리자천이심도적정비관계계산리자천이심도。이용해모형획득적모의결과여실험결과적비교현시，재집성광학기건제작적실험삼수하，이용해모형소획득적리자천이심도변화적규률여상응적실험결과접근。분석표명，유우모형중고필도료초이열도치적파리기편온도적승고，해모형용우연구FAIM과정중적천이심도구유경호적보괄성。
A model for calculation of time dependence of ion migration depth in glass substrate in the process of field-assisted ion-migration (FAIM) was presented, in which glass wafer temperature rise induced by Joule heating effect was taken into consideration. In this model, glass wafer temperature rise behavior was firstly obtained by solving its thermal balance equation; after that, time dependence of electric current density, and in turn charge flux density flowing through glass wafer was calculated;finally, ion migration depth was calculated by utilizing its universally linear dependence on charge flux density. It can be observed that there exists a reasonable agreement between simulated data and experimental results in the respect of ion migration depth, for experimental conditions conventionally applied for glass-based integrated optical device fabrication. Analysis shows that this model possess wider adaptability than the conventional model in the respect of ion migration depth calculation, due to its involving of glass wafer temperature rise effect induced by Joule heating.