CAJ | 학술논문

MEMS射频器件,特别是超宽带器件,对其中的射频器件提出了宽带指标的要求。以此为背景,在理论分析的基础上设计了一种应用于12.5 GHz~50 GHz频带的超宽带双膜桥式MEMS开关,该开关具备低损耗、高隔离度等特点,文中给出了开关的制备工艺,并进行流水完成了芯片制备。经测试,该开关在设计频段内,回波损耗优于20 dB,插入损耗典型值0.3 dB@12.5~35 GHz,优于0.5 dB@45 GHz,隔离度全频段优于20 dB,驱动电压在45 V~55 V之间。
MEMS사빈기건,특별시초관대기건,대기중적사빈기건제출료관대지표적요구。이차위배경,재이론분석적기출상설계료일충응용우12.5 GHz~50 GHz빈대적초관대쌍막교식MEMS개관,해개관구비저손모、고격리도등특점,문중급출료개관적제비공예,병진행류수완성료심편제비。경측시,해개관재설계빈단내,회파손모우우20 dB,삽입손모전형치0.3 dB@12.5~35 GHz,우우0.5 dB@45 GHz,격리도전빈단우우20 dB,구동전압재45 V~55 V지간。
Based on the consideration of high performance in RF MEMS devices, an ultra wideband capacitance MEMS switch is reported,the fabricated switch keeps properties of high isolation,low insertion and ultra wideband. The switch is designed carefully by using ADS and HFSS software,and the fabrication processes are presented. The testing results show that the switch provides high isolation performance at 12. 5 GHz~50 GHz,which is better than 20 dB. Its insertion loss is better than 0. 3 dB@12. 5~35 GHz,and is better than 0. 5 dB@45 GHz. Meanwhile,its return loss is better than 20 dB,and the value of pull-in voltage is between 45V to 55V.