上海电机学院学报
上海電機學院學報
상해전궤학원학보
JOURNAL OF SHANGHAI DIANJI UNIVERSITY
2012年
4期
255-259
,共5页
微波烧结%ZnO压敏电阻%电位梯度
微波燒結%ZnO壓敏電阻%電位梯度
미파소결%ZnO압민전조%전위제도
microwave sintering%ZnO varistors%voltage gradient
采用微波烧结的方法制备出ZnO压敏电阻,并对试样的物相组成、微观形貌和电学性能进行了表征。结果表明,微波烧结制备的ZnO压敏电阻与常规烧结具有相同的物相结构,平均晶粒尺寸为2.1μm;试样的电位梯度、漏电流、非线性系数分别为2 479.1V/mm,6.60μA,22.6;晶界势垒形状尖锐,势垒高度为0.88eV,耗尽层宽度为16nm。与常规绕结ZnO压敏电阻相比,微波烧结过程加热均匀,使试样的微观结构具有较好的一致性,提升了烧结质量,优化了ZnO压敏电阻的电学性能。
採用微波燒結的方法製備齣ZnO壓敏電阻,併對試樣的物相組成、微觀形貌和電學性能進行瞭錶徵。結果錶明,微波燒結製備的ZnO壓敏電阻與常規燒結具有相同的物相結構,平均晶粒呎吋為2.1μm;試樣的電位梯度、漏電流、非線性繫數分彆為2 479.1V/mm,6.60μA,22.6;晶界勢壘形狀尖銳,勢壘高度為0.88eV,耗儘層寬度為16nm。與常規繞結ZnO壓敏電阻相比,微波燒結過程加熱均勻,使試樣的微觀結構具有較好的一緻性,提升瞭燒結質量,優化瞭ZnO壓敏電阻的電學性能。
채용미파소결적방법제비출ZnO압민전조,병대시양적물상조성、미관형모화전학성능진행료표정。결과표명,미파소결제비적ZnO압민전조여상규소결구유상동적물상결구,평균정립척촌위2.1μm;시양적전위제도、루전류、비선성계수분별위2 479.1V/mm,6.60μA,22.6;정계세루형상첨예,세루고도위0.88eV,모진층관도위16nm。여상규요결ZnO압민전조상비,미파소결과정가열균균,사시양적미관결구구유교호적일치성,제승료소결질량,우화료ZnO압민전조적전학성능。
ZnO varistors were prepared by microwave sintering.Phase composition,microstructure and electrical properties of the samples were investigated.Experimental results showed that the phase composition after microwave sintering was the same as that prepared by conventional sintering.Average grain size,voltage gradient,leakage current,nonlinear exponent,barrier height and depletion layer width were 2.1μm,2479.1V/mm,6.60μA,22.6,0.88eV,and 16nm,respectively.Uniformity of microwave sintering improved the quality of grain boundary with a better homogeneity and consistency,resulting in improved electrical properties.