CAJ | 학술논문

用分子束外延技术制备了厚度为0.8μm的GaN样品。采用反射高能电子衍射、原子力显微镜和高分辨率X光衍射仪对样品进行了表征分析。研究发现：样品中刃位错密度为2.2×1010cm-2,比螺位错密度高1个数量级;室温光致发光的研究发现很强的带边峰,黄带和蓝带发光比带边峰强度要低1～2个数量级;室温霍尔测量发现迁移率为129 cm2/v.s,载流子浓度为2.421×1014cm-3。实验结果表明,采用MBE方法生长的GaN能有效降低背景浓度,但是晶体质量较差,位错密度较高。
용분자속외연기술제비료후도위0.8μm적GaN양품。채용반사고능전자연사、원자력현미경화고분변솔X광연사의대양품진행료표정분석。연구발현：양품중인위착밀도위2.2×1010cm-2,비라위착밀도고1개수량급;실온광치발광적연구발현흔강적대변봉,황대화람대발광비대변봉강도요저1～2개수량급;실온곽이측량발현천이솔위129 cm2/v.s,재류자농도위2.421×1014cm-3。실험결과표명,채용MBE방법생장적GaN능유효강저배경농도,단시정체질량교차,위착밀도교고。
In this study, the sample of GaN is grown by MBE. First, we analyze the samples surface morphology by reflection high energy electron diffraction （ RHEED）, and atomic force microscopy （AFM）. The surface of the step-like grain morphology is not observed, which indicates that the sur- face is not very smooth. High-resolution X-ray diffraction （XRD） is used for the characterization of sample quality. The results show that edge dislocation density （2.2 ~ 10l~cm-2） is higher than screw dislocation by one order. The strong band edge emission is observed by photoluminescence （PL） at room temperature, with almost no yellow and blue light emission. Hall measurements at room temper- ature is used for carries concentration and mobility. The carries concentration（2. 421 × 1014cm-3） is very low, resulted from a high dislocation density in the sample.