CAJ | 학술논문

为在室温条件下进行氧化铝薄膜的原子层沉积，自行设计了一套微波回旋共振等离子体辅助原子层沉积装置，以三甲基铝作为铝源前躯体，氧气作为氧化剂，在室温下于氢氟酸溶液中处理过的单晶硅基片上进行了氧化铝薄膜的沉积。利用扫描电子显微镜、原子力显微镜、高分辨率透射电子显微镜、X-ray射线衍射、X-ray射线光电子能谱等分析手段测试了薄膜的表面形貌和成分，结果表明制备的氧化铝薄膜为非晶态结构，铝、氧元素含量配比接近2／3，同时薄膜表面非常光滑平整而且致密，表面粗糙度＜0．4nm。通过高分辨率透射电子显微镜的截面图，可以估算出薄膜厚度约为80nm，界面非常清晰、平整，薄膜质量较高，沉积速率为0．27nm／周期，沉积速率较热沉积大大提高。
위재실온조건하진행양화려박막적원자층침적，자행설계료일투미파회선공진등리자체보조원자층침적장치，이삼갑기려작위려원전구체，양기작위양화제，재실온하우경불산용액중처리과적단정규기편상진행료양화려박막적침적。이용소묘전자현미경、원자력현미경、고분변솔투사전자현미경、X-ray사선연사、X-ray사선광전자능보등분석수단측시료박막적표면형모화성분，결과표명제비적양화려박막위비정태결구，려、양원소함량배비접근2／3，동시박막표면비상광활평정이차치밀，표면조조도＜0．4nm。통과고분변솔투사전자현미경적절면도，가이고산출박막후도약위80nm，계면비상청석、평정，박막질량교고，침적속솔위0．27nm／주기，침적속솔교열침적대대제고。
In order to achieve atomic layer deposition of alumina thin films at room temperature, taking trimethylaluminum （TMA） as the precursor and oxygen as the oxidant, respectively , we used an atomic layer deposition（PA-ALD） setup of homemade electron cyclotron resonance （ECR） assisted with plasma to deposit AI203 thin film on the single crystal silicon surface at room temperature. Through scanning electron microscope （SEM）, atomic force microscope, high resolution transmission electron microscope, X-ray diffraction and X-ray photoelectric spectroscopy, the surface topography and composition of the as-deposited films were tested. It is found that the A12 03 films are amorphous, and the atomic ratio of aluminum to oxygen is close to 2/3. The film surface is very smooth and the roughness is smaller than 0.4 nm. The cross-sectional images show that the film thickness is 80 nm with specially clear and smooth interface, better film quality, and the deposition rate is 0.27 nm in one cycle, which is much larger than the thermal ALD.