CAJ | 학술논문

基于瞬态微波光电导少子寿命测试仪和MATLAB编程研究了确定硅片的复合中心浓度和陷阱中心浓度的方法。利用瞬态微波光电导少子寿命测试仪，我们测量了硅片的少子寿命及微波光电导瞬态电压信号随时间的变化特性。根据已知的注入水平和相关复合参数，建立少子寿命与复合中心浓度的关系，我们得到硅片中的复合中心浓度。利用瞬态电压信号的时间变化特性与非平衡载流子浓度的时间衰减特性的关系，我们得到非平衡载流子浓度随时间的衰减曲线。结合非平衡载流子时间衰减特性曲线和陷阱模型表达式，利用MATLAB软件进行数值拟合得到了硅片的陷阱中心浓度。
기우순태미파광전도소자수명측시의화MATLAB편정연구료학정규편적복합중심농도화함정중심농도적방법。이용순태미파광전도소자수명측시의，아문측량료규편적소자수명급미파광전도순태전압신호수시간적변화특성。근거이지적주입수평화상관복합삼수，건립소자수명여복합중심농도적관계，아문득도규편중적복합중심농도。이용순태전압신호적시간변화특성여비평형재류자농도적시간쇠감특성적관계，아문득도비평형재류자농도수시간적쇠감곡선。결합비평형재류자시간쇠감특성곡선화함정모형표체식，이용MATLAB연건진행수치의합득도료규편적함정중심농도。
By using transient microwave photo -conductance technique and MATLAB software , we investigated the method of determining density of recombination centers and trapping centers .We measured the lifetime of minority carriers in silicon and the changing of microwave photo -conductance transient voltage with time .Based on the injection level and related parameters of recom-bination centers, we established the relationship of minority carriers ’ lifetime and recombination centers ’ density, and then obtained the density of recombination centers .Based on the relation between the changing of transient voltage and the decaying of minority carriers’ density, we obtained the decay curves of minority carriers ’ density with time.Based on the decay curves of minority carri-ers’ density with time and trapping model , we obtained the density of trapping centers by the usage of numerical fitting via MATLAB software .