CAJ | 학술논문

热冲击下InSb面阵探测器的成品率制约着其适用性。为了解光敏元隔离槽深度对InSb芯片中热应力的影响，针对典型器件结构，借助ANSYS软件，分析了隔离槽深度对InSb芯片、底充胶和硅读出电路中VonMises应力的影响。模拟结果表明：随着隔离槽深度的增加，InSb芯片上的热应力起初缓慢增加，之后增加速度越来越快，当隔离槽深度超过8μm后，InSb芯片上的热应力陡峭上升。对硅读出电路和底充胶来说，在热冲击下累积的热应力似乎与隔离槽深度无关，分别在370MPa和190MPa左右浮动。当隔离槽深度取4μm时，整个器件的热应力较小、且分布均匀．能够满足光学串扰及结构可靠性设计的需求。
열충격하InSb면진탐측기적성품솔제약착기괄용성。위료해광민원격리조심도대InSb심편중열응력적영향，침대전형기건결구，차조ANSYS연건，분석료격리조심도대InSb심편、저충효화규독출전로중VonMises응력적영향。모의결과표명：수착격리조심도적증가，InSb심편상적열응력기초완만증가，지후증가속도월래월쾌，당격리조심도초과8μm후，InSb심편상적열응력두초상승。대규독출전로화저충효래설，재열충격하루적적열응력사호여격리조심도무관，분별재370MPa화190MPa좌우부동。당격리조심도취4μm시，정개기건적열응력교소、차분포균균．능구만족광학천우급결구가고성설계적수구。
Higher fracture probability, appearing in InSb infrared focal plane array （IRFPA） detec- tor under thermal shock loadings, limits its suitability. To learn the effects from photosensitive cells isola- tion trough depth to the InSb infrared focal plane array detector structural stress, for a typical InSb IRFPA structure with underfill, here ANSYS, is employed to research the impacts from isolation trough depths on both Von Mises stress and its distribution. Simulation results show that as the isolation trough depth in- creases from 0 μm to 10 μm in step of 2 μm, the maximal Von Mises stress in the InSb chip first increa- ses slowly, then accelerates fast, once the isolation trough depth is over 8 μm, the maximal Von Mises stress augments steeply, yet for both Si-ROIC and underfill, the thermal stress accumulated in the thermal shock test seems have noting to do with the isolation trough depths, and fluctuates 370 MPa and 190 MPa, respectively. When the isolation trough depth is set at 4 μm, the thermal stress is uniform and small, which can satisfy the need from photo cross talk and structural reliability.