CAJ | 학술논문

吸收边缘半抛物量子阱折射率的双峰结构的改变作为入射光强度的功能一直被研究，而且已经获得运用密度矩阵和迭代法所推导的关于折射率改变的公式．并呈现了在典型的AIGaAs／GaAs量子阱中所推导的数值结果．结构表明，入射光强度和半抛物量子阱的束缚频率是对折射率双峰结构的最大影响参数．
흡수변연반포물양자정절사솔적쌍봉결구적개변작위입사광강도적공능일직피연구，이차이경획득운용밀도구진화질대법소추도적관우절사솔개변적공식．병정현료재전형적AIGaAs／GaAs양자정중소추도적수치결과．결구표명，입사광강도화반포물양자정적속박빈솔시대절사솔쌍봉결구적최대영향삼수．
Double peaks of the refractive index changes near the absorption edge in semi-parabolic quantum wells are examined as a function of the incident optical intensity, and an analytic formula for the changes in the refractive index is obtained by using the compact-density matrix approach and an iterative method. Numerical results are presented for some typical A1GaAs/GaAs quantum wells. The calculated results show that the inci- dent optical intensity and the semi-parabolic confinement frequency have a great influence on the double peaks of total refractive index changes.