高电压技术
高電壓技術
고전압기술
HIGH VOLTAGE ENGINEERING
2012年
6期
1506-1512
,共7页
模块化多电平换流器%通态损耗%开关损耗%曲线拟合%结温反馈%热电路模型
模塊化多電平換流器%通態損耗%開關損耗%麯線擬閤%結溫反饋%熱電路模型
모괴화다전평환류기%통태손모%개관손모%곡선의합%결온반궤%열전로모형
modular multilevel converter%conduction losses%switching losses%curve fitting%junction temperaturefeedback%thermal circuit model
为了计算模块化多电平换流器(modular multilevel converter,MMC)的半导体器件在实际工作结温下的损耗,提出了基于结温反馈方法的MMC损耗计算方法。根据供应商数据及仿真得到的换流器实时电压电流值,在PSCAD/EMTDC中建立了考虑结温变化的损耗计算模块,分析了MMC子模块各部分的通态损耗和开关损耗。同时给出了不同散热器温度下MMC一端换流站的阀损耗比例。计算结果表明,由于器件的实际工作结温往往低于标准结温,因此采用结温反馈后计算得到的换流阀损耗值小于采用恒定结温方法得出的结果。同时证明了MMC的开关损耗较小,在不计吸收电路及驱动电路损耗的前提下,其单站阀损耗占额定直流功率的比例可以下降至〈1%,这与二电平和三电平电压源换流器拓扑相比有明显的下降。
為瞭計算模塊化多電平換流器(modular multilevel converter,MMC)的半導體器件在實際工作結溫下的損耗,提齣瞭基于結溫反饋方法的MMC損耗計算方法。根據供應商數據及倣真得到的換流器實時電壓電流值,在PSCAD/EMTDC中建立瞭攷慮結溫變化的損耗計算模塊,分析瞭MMC子模塊各部分的通態損耗和開關損耗。同時給齣瞭不同散熱器溫度下MMC一耑換流站的閥損耗比例。計算結果錶明,由于器件的實際工作結溫往往低于標準結溫,因此採用結溫反饋後計算得到的換流閥損耗值小于採用恆定結溫方法得齣的結果。同時證明瞭MMC的開關損耗較小,在不計吸收電路及驅動電路損耗的前提下,其單站閥損耗佔額定直流功率的比例可以下降至〈1%,這與二電平和三電平電壓源換流器拓撲相比有明顯的下降。
위료계산모괴화다전평환류기(modular multilevel converter,MMC)적반도체기건재실제공작결온하적손모,제출료기우결온반궤방법적MMC손모계산방법。근거공응상수거급방진득도적환류기실시전압전류치,재PSCAD/EMTDC중건립료고필결온변화적손모계산모괴,분석료MMC자모괴각부분적통태손모화개관손모。동시급출료불동산열기온도하MMC일단환류참적벌손모비례。계산결과표명,유우기건적실제공작결온왕왕저우표준결온,인차채용결온반궤후계산득도적환류벌손모치소우채용항정결온방법득출적결과。동시증명료MMC적개관손모교소,재불계흡수전로급구동전로손모적전제하,기단참벌손모점액정직류공솔적비례가이하강지〈1%,저여이전평화삼전평전압원환류기탁복상비유명현적하강。
We evaluated losses of the converter power of modular multilevel converter { MMC) by a junction temperature feedback methr~d. Using the data provided by the manufacturer, we acquired the characteristic of semiconductor device, and calculated both the switching and conduction losses with the real-time voltage and current waveforms, which were derived from the detailed PSCAD/EMTDC model. Moreover, we applied the thermal circuit model to estimate the average junction temperatures of the semiconductors, and investigated the converter valve losses with different heat sink temperatures. Power losses evaluation results demonstrate that the power loss of MMC topology is lower than 1~ of the rated power, which is lower than that of the 2-level or 3-level VSC topologies.