CAJ | 학술논문

在采用COREMA方法测试SiC晶片电阻率时发现同一晶片电阻率相差较大．主要体现在高阻（〉10^5Ω·cm量级）和低阻（〈10^5量级）并存，有的甚至超高阻（〉10^12量级）和低阻并存，针对这一测试结果，开展了相关的实验研究，SiC单晶半绝缘性能的实现是通过在单晶生长过程中掺入深能级杂质V来补偿浅施主N和浅受主B，利用二次质谱（SIMS）对同一晶片不同区域的杂质元素V、N和B含量进行测试，结果发现晶片中v和N的含量都在1×10^17量级时会出现同一晶片不同区域电阻率相差较大的情况，而当V含量在1×10^17量级，N含量在5×10^16量级以下时，可制备电阻率均匀性好的半绝缘SiC单晶。
재채용COREMA방법측시SiC정편전조솔시발현동일정편전조솔상차교대．주요체현재고조（〉10^5Ω·cm량급）화저조（〈10^5량급）병존，유적심지초고조（〉10^12량급）화저조병존，침대저일측시결과，개전료상관적실험연구，SiC단정반절연성능적실현시통과재단정생장과정중참입심능급잡질V래보상천시주N화천수주B，이용이차질보（SIMS）대동일정편불동구역적잡질원소V、N화B함량진행측시，결과발현정편중v화N적함량도재1×10^17량급시회출현동일정편불동구역전조솔상차교대적정황，이당V함량재1×10^17량급，N함량재5×10^16량급이하시，가제비전조솔균균성호적반절연SiC단정。
We found that the resistivity of SiC varies widely in the same wafer with different areas during measured by SemiMap COREMA-WT （contactless resistivity mapping） , the values may be below 1× 10^5 1Ω·cm, between 1 × 10^5 -1×1012 Ω·cm, and over 1 × 10^12 Ω·cm. As we know, the vanadium act as deep acceptor to compensate all donor nitrogen and boron impurity, then SI-SiC can be obtained. Secondary ion mass spectroscopy （SIMS） was used to determine the impurities of boron, nitrogen and vanadium which play an important role in terms of resistivity. As a result, when the concentration of the vanadium and nitrogen was 1 × 10^17 cm^3, the resistivity of the wafer with different areas may be vary widely, but when the concentration of the vanadium was 1 × 10^17 cm3, and the concentration of the nitrogen was lower 5× 10^16 cm^3, SI-SiC with high resistivity uniformity can be obtained.