CAJ | 학술논문

采用导纳谱对 SiGe 双层量子点进行测试，通过对测试数据分别进行多频和单频处理，发现两者获得的激活能存在差别，原因主要来自衬底肖特基势垒或是缺陷、杂质等漏电流产生的附加电导。因此，对量子点样品的衬底材料p型Si进行导纳谱测试，从理论上分析和给出其电导的具体形式，并给出具体参数α作为判断附加电导影响大小的依据。对量子点样品的导纳谱测试结果进行修正，在总电导上减去附加电导，使单频和多频的处理结果完全一致，从而得到更加准确的结果。
채용도납보대 SiGe 쌍층양자점진행측시，통과대측시수거분별진행다빈화단빈처리，발현량자획득적격활능존재차별，원인주요래자츤저초특기세루혹시결함、잡질등루전유산생적부가전도。인차，대양자점양품적츤저재료p형Si진행도납보측시，종이론상분석화급출기전도적구체형식，병급출구체삼수α작위판단부가전도영향대소적의거。대양자점양품적도납보측시결과진행수정，재총전도상감거부가전도，사단빈화다빈적처리결과완전일치，종이득도경가준학적결과。
Double-layer quantum dots have been studied with admittance spectroscopy. By comparing the activation ener-gies obtained from multi-frequency admittance spectroscopy and single frequency admittance spectroscopy,the difference between activation energies was found. The reason is that the conductance acquired from the experiment came not only from the quantum dots but also the Schottky barriers or traps in the substrate. The p-Si substrate was also studied with admittance spectroscopy in order to acquire the conductance of p-Si and give a parameterα to estimate the influence of the accessional conductance. Thus,the accessional conductance could be eliminated so as to obtain more accurate results. The feasibility of the correction method has been proved by theoretical simulation.