中国材料进展
中國材料進展
중국재료진전
MATERIALS CHINA
2012年
8期
1-6,32
,共7页
热透波材料%热电行为%高温电性能测试%介电常数%介电损耗%热透波行为
熱透波材料%熱電行為%高溫電性能測試%介電常數%介電損耗%熱透波行為
열투파재료%열전행위%고온전성능측시%개전상수%개전손모%열투파행위
high temperature wave-transparent materials%high temperature dielectric properties%high temperature dielectric parameters measurement%dielectric constant%dielectric loss%high temperature wave-transparent behavior
热透波材料技术是高超声速飞行器实现通讯与精确导航的关键技术，文章从热透波材料体系、热透波材料热电行为和高温电性能测试技术等方面对热透波材料及其相关技术的发展现状进行了简要介绍。在材料体系方面，石英陶瓷及二氧化硅基复合材料是目前应用的主要材料品种，多孔氮化物陶瓷及陶瓷基复合材料是未来发展的重要方向。在热电行为研究方面，对典型氧化物、氮化物、氮氧化物材料热电行为规律及杂质离子对材料热电行为的影响等方面的研究获得重要进展，并获得试验验证。在高温电性能测试方面，近年来突破了1600℃高温宽频测试关键技术，并获得了氧化硅熔融态介电性能实测数据，国外和国内已实现8MW／m^2热透波实时测试。
熱透波材料技術是高超聲速飛行器實現通訊與精確導航的關鍵技術，文章從熱透波材料體繫、熱透波材料熱電行為和高溫電性能測試技術等方麵對熱透波材料及其相關技術的髮展現狀進行瞭簡要介紹。在材料體繫方麵，石英陶瓷及二氧化硅基複閤材料是目前應用的主要材料品種，多孔氮化物陶瓷及陶瓷基複閤材料是未來髮展的重要方嚮。在熱電行為研究方麵，對典型氧化物、氮化物、氮氧化物材料熱電行為規律及雜質離子對材料熱電行為的影響等方麵的研究穫得重要進展，併穫得試驗驗證。在高溫電性能測試方麵，近年來突破瞭1600℃高溫寬頻測試關鍵技術，併穫得瞭氧化硅鎔融態介電性能實測數據，國外和國內已實現8MW／m^2熱透波實時測試。
열투파재료기술시고초성속비행기실현통신여정학도항적관건기술，문장종열투파재료체계、열투파재료열전행위화고온전성능측시기술등방면대열투파재료급기상관기술적발전현상진행료간요개소。재재료체계방면，석영도자급이양화규기복합재료시목전응용적주요재료품충，다공담화물도자급도자기복합재료시미래발전적중요방향。재열전행위연구방면，대전형양화물、담화물、담양화물재료열전행위규률급잡질리자대재료열전행위적영향등방면적연구획득중요진전，병획득시험험증。재고온전성능측시방면，근년래돌파료1600℃고온관빈측시관건기술，병획득료양화규용융태개전성능실측수거，국외화국내이실현8MW／m^2열투파실시측시。
the technique of high temperature wave-transparent materials is the key technique for the communication and navigation of hypersonic vehicles. This paper reviews the research and developments of high temperature wave-transparent materials and relative fields in recent years, including the material system, the high temperature dielectric properties and the high temperature dielectric parameters measurement. For material system, the quartz ceramics and quartz fiber rein- forced composites are the main applicable materials so far; the porous nitride ceramics and composites will be an important development trend in the future. For the high temperature dielectric properties, the important progress and experimental verification have been made on the high temperature dielectric behaviors of typical oxides, nitrides and nitrogen oxide as well as the effects of impurities on dielectric properties. For the high temperature dielectric parameters measurement, the key technique of board band dielectric measurement from room temperature to 1 600 ~C has been developed recently and the dielectric parameters of tusing silicon oxide have been successfully obtained for the first time. Moreover, the real-time measurements for high temperature wave-transparent properties under the condition of 8 MW/m^2 heat flux are achieved.
