CAJ | 학술논문

研究用BP212正性光刻胶（浸泡氯苯）、AZP4620正性光刻胶（浸泡氯苯）、AZ5214E反转光刻胶光刻后的图形剥离金属的难易度及图形质量．用扫描电镜（SEM）观察不同光刻胶及浸泡氯苯后的侧壁图形，并分析不同侧壁图形的形成机理，找出最佳工艺参数，并应用于射频MEMS开关制作中的金属剥离．
연구용BP212정성광각효（침포록분）、AZP4620정성광각효（침포록분）、AZ5214E반전광각효광각후적도형박리금속적난역도급도형질량．용소묘전경（SEM）관찰불동광각효급침포록분후적측벽도형，병분석불동측벽도형적형성궤리，조출최가공예삼수，병응용우사빈MEMS개관제작중적금속박리．
The lift-off processes of BP212 positive photoresist （and chlorobenzene treatment） and AZP4620 positive photoresist （and chlorobenzene treatment） were studied. AZ5214E image-reversal photoresist was also studied. Side wall graphics were observed using scanning electron microscope （SEM）. The forming mechanism of different lateral wall pattern was analysed. The optimum process parameters were found and used in metal lift-off in RF MEMS switches.