兵工学报：英文版
兵工學報：英文版
병공학보：영문판
Journal of China Ordnance
2012年
2期
119-123
,共5页
optoelectronics and laser%EMCCD%electron multiplication%gain on chip%fringing field%charge multiplication gate
The avalanche multiplication principle of electron multiplication CCD （EMCCD） was discussed on the basis of single type of carrier, and the multiplication model was buih by using a classic piecewise ionization rate model and ava- lanche multiplication integral formula. Wolff＇ s ionization rate model was selected according to the structure and the multi- plication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.
